The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
THz파는 해상도가 충분하고 물질에 침투할 수 있는 장점이 있어 영상시스템으로 활용이 검토되고 있다. THz 파의 전파 거리는 짧게 제한됩니다. 이는 실내 무선 통신 등에 적용하기 위한 장점이기도 합니다. 초고주파 발진기(및 동시에 송신기) 장치를 구현하려면 작은 전자 여기 특성과 안테나 구성 및 웨이퍼 상에 있는 특성이 중요합니다. 이를 위해 AIST에서 제안한 네거티브 차동 저항 듀얼 채널 트랜지스터(NDR-DCT)가 활용됩니다. 본 논문에서는 초기 이론적 분석으로 위의 응용이 예상되는 테라헤르츠 대역 내에서 약 100GHz-1THz에서 이 장치의 발진 주파수를 시뮬레이션했습니다. 공진 터널링 다이오드(RTD)와의 유추를 바탕으로 NDR-DCT의 등가 회로 모델을 나타내었고, 수치해석을 통해 공진 회로 부분인 안테나를 설계하였다. 이 장치의 THz 진동 가능성이 확인되었습니다. 우리가 제안한 슬릿 반사경은 장치의 슬롯 안테나를 효과적으로 구현할 수 있으며 XNUMX단자 구조의 반도체에 적합합니다. 제조가 비교적 쉽습니다.
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Katsumi FURUYA, Takeyoshi SUGAYA, Kazuhiro KOMORI, Masahiro ASADA, "An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor" in IEICE TRANSACTIONS on Communications,
vol. E91-B, no. 6, pp. 1800-1805, June 2008, doi: 10.1093/ietcom/e91-b.6.1800.
Abstract: As THz wave has the advantages of enough resolution and penetration to materials, it has been examined to be used for the imaging system. The propagation distance of THz wave is limited to be short. That is also the advantage for application to the indoor wireless communication etc. For the achievement of the ultra-high frequency oscillator (and concurrently transmitter) device, the properties of small, electronic excitation, the antenna constructed and being on the wafer are important. For the purpose, the Negative differential resistance Dual channel transistor (NDR-DCT) proposed by AIST is utilized. In this paper, as an initial theoretical analysis, we simulated the oscillation frequency of this device at about 100 GHz-1THz within the Terahertz band on which the above applications was expected. The equivalent circuit model of NDR-DCT was shown based on the analogy with the resonant tunnelling diode (RTDs), and the antenna as the resonance circuit part was designed by the numerical analysis. The possibility of the THz oscillation of this device was confirmed. The slit reflector that we proposed can realize the slot antenna on the device effectively and is suitable for three terminal structure semiconductor. its manufacturing is relatively easy.
URL: https://global.ieice.org/en_transactions/communications/10.1093/ietcom/e91-b.6.1800/_p
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@ARTICLE{e91-b_6_1800,
author={Katsumi FURUYA, Takeyoshi SUGAYA, Kazuhiro KOMORI, Masahiro ASADA, },
journal={IEICE TRANSACTIONS on Communications},
title={An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor},
year={2008},
volume={E91-B},
number={6},
pages={1800-1805},
abstract={As THz wave has the advantages of enough resolution and penetration to materials, it has been examined to be used for the imaging system. The propagation distance of THz wave is limited to be short. That is also the advantage for application to the indoor wireless communication etc. For the achievement of the ultra-high frequency oscillator (and concurrently transmitter) device, the properties of small, electronic excitation, the antenna constructed and being on the wafer are important. For the purpose, the Negative differential resistance Dual channel transistor (NDR-DCT) proposed by AIST is utilized. In this paper, as an initial theoretical analysis, we simulated the oscillation frequency of this device at about 100 GHz-1THz within the Terahertz band on which the above applications was expected. The equivalent circuit model of NDR-DCT was shown based on the analogy with the resonant tunnelling diode (RTDs), and the antenna as the resonance circuit part was designed by the numerical analysis. The possibility of the THz oscillation of this device was confirmed. The slit reflector that we proposed can realize the slot antenna on the device effectively and is suitable for three terminal structure semiconductor. its manufacturing is relatively easy.},
keywords={},
doi={10.1093/ietcom/e91-b.6.1800},
ISSN={1745-1345},
month={June},}
부
TY - JOUR
TI - An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor
T2 - IEICE TRANSACTIONS on Communications
SP - 1800
EP - 1805
AU - Katsumi FURUYA
AU - Takeyoshi SUGAYA
AU - Kazuhiro KOMORI
AU - Masahiro ASADA
PY - 2008
DO - 10.1093/ietcom/e91-b.6.1800
JO - IEICE TRANSACTIONS on Communications
SN - 1745-1345
VL - E91-B
IS - 6
JA - IEICE TRANSACTIONS on Communications
Y1 - June 2008
AB - As THz wave has the advantages of enough resolution and penetration to materials, it has been examined to be used for the imaging system. The propagation distance of THz wave is limited to be short. That is also the advantage for application to the indoor wireless communication etc. For the achievement of the ultra-high frequency oscillator (and concurrently transmitter) device, the properties of small, electronic excitation, the antenna constructed and being on the wafer are important. For the purpose, the Negative differential resistance Dual channel transistor (NDR-DCT) proposed by AIST is utilized. In this paper, as an initial theoretical analysis, we simulated the oscillation frequency of this device at about 100 GHz-1THz within the Terahertz band on which the above applications was expected. The equivalent circuit model of NDR-DCT was shown based on the analogy with the resonant tunnelling diode (RTDs), and the antenna as the resonance circuit part was designed by the numerical analysis. The possibility of the THz oscillation of this device was confirmed. The slit reflector that we proposed can realize the slot antenna on the device effectively and is suitable for three terminal structure semiconductor. its manufacturing is relatively easy.
ER -