The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 국부적인 XNUMX차 광학 비선형성을 갖는 도파관 X-접합을 사용하는 새로운 전광학 기능 장치를 제안합니다. 여기서 하나의 가지는 Kerr와 같은 비선형 재료로 만들어지고 나머지는 선형 재료로 만들어집니다. 선형 및 비선형 결합 유도파 시스템의 비선형 분산 특성과 같은 쌍안정으로 인해 전광 스위칭 작동을 얻을 수 있습니다. 장치의 성능은 비선형 정상 모드 분석과 결합된 비선형 도파관에 대해 수정된 빔 전파 방법(BPM)으로 분석됩니다. 또한, 반도체 다중양자우물(MQW) 구조의 밴드갭 에너지를 선택적으로 제어하는 기술을 활용하여 국부적인 비선형성을 갖는 도파관을 구성하는 방법에 대해 논의하고, 설계된 소자의 성능을 제시한다.
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부
Hiroshi MURATA, Masayuki IZUTSU, Tadasi SUETA, "All-Optical Switching in Novel Waveguide X-Junctions with Localized Nonlinearity" in IEICE TRANSACTIONS on Communications,
vol. E82-B, no. 2, pp. 373-378, February 1999, doi: .
Abstract: We propose novel all-optical functional devices using waveguide X-junctions with localized third order optical nonlinearity, where one branch is made from a Kerr-like nonlinear material and the rest are made from linear ones. All-optical switching operations can be obtained because of bistable like nonlinear dispersion characteristics in linear and nonlinear coupled guided-wave systems. The performances of the devices are analyzed by the Beam Propagation Method (BPM) modified for nonlinear waveguides combined with the nonlinear normal mode analysis. The methods to construct the waveguides with localized nonlinearity are also discussed by utilizing the technologies for the selective control of a band-gap energy of semiconductor Multi Quantum Well (MQW) structures and the performances of the designed devices are presented.
URL: https://global.ieice.org/en_transactions/communications/10.1587/e82-b_2_373/_p
부
@ARTICLE{e82-b_2_373,
author={Hiroshi MURATA, Masayuki IZUTSU, Tadasi SUETA, },
journal={IEICE TRANSACTIONS on Communications},
title={All-Optical Switching in Novel Waveguide X-Junctions with Localized Nonlinearity},
year={1999},
volume={E82-B},
number={2},
pages={373-378},
abstract={We propose novel all-optical functional devices using waveguide X-junctions with localized third order optical nonlinearity, where one branch is made from a Kerr-like nonlinear material and the rest are made from linear ones. All-optical switching operations can be obtained because of bistable like nonlinear dispersion characteristics in linear and nonlinear coupled guided-wave systems. The performances of the devices are analyzed by the Beam Propagation Method (BPM) modified for nonlinear waveguides combined with the nonlinear normal mode analysis. The methods to construct the waveguides with localized nonlinearity are also discussed by utilizing the technologies for the selective control of a band-gap energy of semiconductor Multi Quantum Well (MQW) structures and the performances of the designed devices are presented.},
keywords={},
doi={},
ISSN={},
month={February},}
부
TY - JOUR
TI - All-Optical Switching in Novel Waveguide X-Junctions with Localized Nonlinearity
T2 - IEICE TRANSACTIONS on Communications
SP - 373
EP - 378
AU - Hiroshi MURATA
AU - Masayuki IZUTSU
AU - Tadasi SUETA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Communications
SN -
VL - E82-B
IS - 2
JA - IEICE TRANSACTIONS on Communications
Y1 - February 1999
AB - We propose novel all-optical functional devices using waveguide X-junctions with localized third order optical nonlinearity, where one branch is made from a Kerr-like nonlinear material and the rest are made from linear ones. All-optical switching operations can be obtained because of bistable like nonlinear dispersion characteristics in linear and nonlinear coupled guided-wave systems. The performances of the devices are analyzed by the Beam Propagation Method (BPM) modified for nonlinear waveguides combined with the nonlinear normal mode analysis. The methods to construct the waveguides with localized nonlinearity are also discussed by utilizing the technologies for the selective control of a band-gap energy of semiconductor Multi Quantum Well (MQW) structures and the performances of the designed devices are presented.
ER -