The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
GaAlAs/GaAs 분산 브래그 반사기(DBR)로 구성된 새로운 온도 민감형 파장 필터가 시연되었습니다. 이 미세 가공된 DBR은 차등 열 팽창을 통해 기계적으로 조정됩니다. 하나의 거울의 변형으로 인한 변위는 온도 의존성을 조정할 수 있는 파장 조정 및 트리밍 기능을 생성할 수 있습니다. 우리는 수직 캐비티 구조를 적절하게 설계함으로써 미세 가공된 반도체 필터의 온도 의존성을 제어하는 데 성공했습니다. 달성된 온도 의존성은 기존 반도체 기반 광학 필터의 0.01/20인 +4nm/K만큼 작았습니다. 또한, 소자 제작이 완료된 후 XNUMX nm 이상의 파장 트리밍이 입증되었습니다. 게다가 우리는 XNUMX를 시연했습니다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Takeru AMANO, Fumio KOYAMA, Nobuhiko NISHIYAMA, Akihiro MATSUTANI, Kenichi IGA, "Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter" in IEICE TRANSACTIONS on Communications,
vol. E84-B, no. 5, pp. 1304-1310, May 2001, doi: .
Abstract: A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
URL: https://global.ieice.org/en_transactions/communications/10.1587/e84-b_5_1304/_p
부
@ARTICLE{e84-b_5_1304,
author={Takeru AMANO, Fumio KOYAMA, Nobuhiko NISHIYAMA, Akihiro MATSUTANI, Kenichi IGA, },
journal={IEICE TRANSACTIONS on Communications},
title={Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter},
year={2001},
volume={E84-B},
number={5},
pages={1304-1310},
abstract={A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
keywords={},
doi={},
ISSN={},
month={May},}
부
TY - JOUR
TI - Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter
T2 - IEICE TRANSACTIONS on Communications
SP - 1304
EP - 1310
AU - Takeru AMANO
AU - Fumio KOYAMA
AU - Nobuhiko NISHIYAMA
AU - Akihiro MATSUTANI
AU - Kenichi IGA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Communications
SN -
VL - E84-B
IS - 5
JA - IEICE TRANSACTIONS on Communications
Y1 - May 2001
AB - A novel temperature insensitive wavelength filter consisting of GaAlAs/GaAs distributed Bragg reflectors (DBRs) has been demonstrated. This micromachined DBR is mechanically tuned by differential thermal expansion. The strain-induced displacement of one mirror can generate wavelength tuning and trimming functions with an adjustable temperature dependence. We succeeded in the control of temperature dependence in this micromachined semiconductor filter by properly designing a vertical cavity structure. The achieved temperature dependence was as small as +0.01 nm/K, which is one-tenth of that of conventional semiconductor based optical filters. Also, a wavelength trimming of over 20 nm was demonstrated after completing the device fabrication. In addition, we demonstrated a 4
ER -