The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
TFPT(박막 광 트랜지스터)에는 p/i/n TFPT와 n/i/n TFPT의 두 가지 유형이 작동 조건 및 장치 동작의 관점에서 특징이 있습니다. 감지된 전류는 인가된 전압(Vapply)에 독립적일 수 있고 p/i/n TFPT의 포화 영역에서 광조도에 선형적으로 의존할 수 있음이 밝혀졌습니다. 이러한 특성은 Vapply가 증가하더라도 공핍층은 진성 영역 전체에 남아 있고, 전기장은 p형/진성 계면과 진성/n형 계면 근처에서만 변화하고 가장 진성 영역에는 남아 있기 때문이다. 이 특성은 일부 종류의 광센서 응용 분야에 적합합니다. 마지막으로 p/i/n TFPT인 인공망막의 응용 사례를 소개한다.
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Mutsumi KIMURA, Yoshitaka NISHIZAKI, Takehiko YAMASHITA, Takehiro SHIMA, Tomohisa HACHIDA, "Device Characterization of Thin-Film Phototransistors for Photosensor Applications" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 10, pp. 1557-1563, October 2008, doi: 10.1093/ietele/e91-c.10.1557.
Abstract: Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1557/_p
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@ARTICLE{e91-c_10_1557,
author={Mutsumi KIMURA, Yoshitaka NISHIZAKI, Takehiko YAMASHITA, Takehiro SHIMA, Tomohisa HACHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Device Characterization of Thin-Film Phototransistors for Photosensor Applications},
year={2008},
volume={E91-C},
number={10},
pages={1557-1563},
abstract={Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.},
keywords={},
doi={10.1093/ietele/e91-c.10.1557},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - Device Characterization of Thin-Film Phototransistors for Photosensor Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1557
EP - 1563
AU - Mutsumi KIMURA
AU - Yoshitaka NISHIZAKI
AU - Takehiko YAMASHITA
AU - Takehiro SHIMA
AU - Tomohisa HACHIDA
PY - 2008
DO - 10.1093/ietele/e91-c.10.1557
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.
ER -