The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 SiO2를 얻기 위해 두 개의 스퍼터링 소스를 사용하는 새로운 고속 경사 증착 방법을 제안했습니다.2 액정 배향막용 필름. 금속 모드에서 작동하는 하나의 스퍼터링 소스는 Si 원자를 기판에 공급하고, 산화물 모드에서 작동하는 다른 소스는 산소 라디칼을 기판에 공급합니다. 증착 챔버의 가스 압력을 낮추고 두 개의 스퍼터링 소스를 서로 다른 모드로 작동시키기 위해 스퍼터링 소스를 스테인레스 메쉬로 증착 챔버와 분리하고 Ar과 산소 가스를 두 개의 스퍼터링 소스, 즉 Ar을 통해 별도로 도입했습니다. Si 공급원을 통해 가스가 도입되고, 산소 라디칼 소스를 통해 산소 가스가 도입되었다. Ar 가스 30 sccm과 산소 가스 4 sccm을 시스템에 도입했을 때 증착 챔버의 가스 압력은 1.7 mTorr 이하로 유지되었으며 70도 이상의 입사각으로 증착되었습니다.
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부
Yoichi HOSHI, Kensuke YAGI, Eisuke SUZUKI, Hao LEI, Akira SAKAI, "High-Rate Oblique Deposition of SiO2 Films Using Two Sputtering Sources" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 10, pp. 1644-1648, October 2008, doi: 10.1093/ietele/e91-c.10.1644.
Abstract: In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO2 films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i.e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30 sccm and oxygen gas of 4 sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7 mTorr and the films deposited at an incidence angle of more than 70
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.10.1644/_p
부
@ARTICLE{e91-c_10_1644,
author={Yoichi HOSHI, Kensuke YAGI, Eisuke SUZUKI, Hao LEI, Akira SAKAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Rate Oblique Deposition of SiO2 Films Using Two Sputtering Sources},
year={2008},
volume={E91-C},
number={10},
pages={1644-1648},
abstract={In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO2 films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i.e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30 sccm and oxygen gas of 4 sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7 mTorr and the films deposited at an incidence angle of more than 70
keywords={},
doi={10.1093/ietele/e91-c.10.1644},
ISSN={1745-1353},
month={October},}
부
TY - JOUR
TI - High-Rate Oblique Deposition of SiO2 Films Using Two Sputtering Sources
T2 - IEICE TRANSACTIONS on Electronics
SP - 1644
EP - 1648
AU - Yoichi HOSHI
AU - Kensuke YAGI
AU - Eisuke SUZUKI
AU - Hao LEI
AU - Akira SAKAI
PY - 2008
DO - 10.1093/ietele/e91-c.10.1644
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2008
AB - In this paper, we proposed a new high-rate oblique deposition method using two sputtering sources to obtain SiO2 films for a liquid crystal alignment layer. One sputtering source that operates in a metal mode supplies Si atoms to a substrate, and the other source that operates in an oxide mode supplies oxygen radicals to a substrate. To reduce the gas pressure of a deposition chamber and make the two sputtering sources operate in different modes, the sputtering sources were separated from the deposition chamber with stainless meshes, and Ar and oxygen gases were introduced separately through the two sputtering sources, i.e., Ar gas was introduced through the Si supply source and oxygen gas was introduced through the oxygen radical source. When Ar gas of 30 sccm and oxygen gas of 4 sccm were introduced into the system, the gas pressure of the deposition chamber was maintained below 1.7 mTorr and the films deposited at an incidence angle of more than 70
ER -