The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
전대역 UWB 수신기로 저잡음 특성을 갖는 광대역 InGaP/GaAs HBT MMIC 증폭기가 개발되었다. 전력 소모를 줄이기 위해 드라이버 앰프에 스케일링 법칙을 적용하고 노이즈 지수를 낮추는 수정을 포함하여 앰프를 설계했습니다. 베이스 저항을 낮추고 증폭기의 잡음지수를 낮추기 위해 이중 이미터 HBT의 삼중 베이스 구조를 채용하였다. 제작된 증폭기는 3dB 피크 전력 이득으로 1.1GHz에서 10.6GHz까지 14.1dB 이득 롤오프 대역폭을 제공했습니다. 증폭기는 UWB 전대역에서 15.9mW의 낮은 전력 소모와 3.7dB 미만의 낮은 잡음 지수를 나타냈다.
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Ryo ISHIKAWA, Takuya ABE, Kazuhiko HONJO, Masao SHIMADA, "InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 11, pp. 1828-1831, November 2008, doi: 10.1093/ietele/e91-c.11.1828.
Abstract: A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.11.1828/_p
부
@ARTICLE{e91-c_11_1828,
author={Ryo ISHIKAWA, Takuya ABE, Kazuhiko HONJO, Masao SHIMADA, },
journal={IEICE TRANSACTIONS on Electronics},
title={InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems},
year={2008},
volume={E91-C},
number={11},
pages={1828-1831},
abstract={A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.},
keywords={},
doi={10.1093/ietele/e91-c.11.1828},
ISSN={1745-1353},
month={November},}
부
TY - JOUR
TI - InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 1828
EP - 1831
AU - Ryo ISHIKAWA
AU - Takuya ABE
AU - Kazuhiko HONJO
AU - Masao SHIMADA
PY - 2008
DO - 10.1093/ietele/e91-c.11.1828
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2008
AB - A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.
ER -