The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
AlGaN/GaN 고전자 이동도 트랜지스터(HEMT)에서 전류 붕괴 현상에 의한 드레인 전류 감소는 전력 증폭기 애플리케이션의 고효율 작동에 큰 장애물입니다. 본 연구에서는 SiN 보호막 품질이 AlGaN/GaN HEMT의 전기적 특성에 미치는 영향을 조사했습니다. 먼저, AlGaN/GaN HEMT의 전기적 특성과 플라즈마 강화 화학 기상 증착(PE-CVD)에 의한 SiN 패시베이션막의 다양한 조건 사이의 관계를 조사하기 위해 몇 가지 실험을 수행했습니다. 우리는 NH의 최적화된 조건으로 증착된 SiN 패시베이션막에 의해 게이트 전류 누출과 전류 붕괴가 동시에 개선된다는 것을 발견했습니다.3 그리고 SiH4 가스 흐름. 최적화에서 중요한 매개변수는 I임이 밝혀졌습니다.NH/ 나Si-H 푸리에로 측정한 비율은 적외선 분광법(FT-IR) 스펙트럼을 변환합니다. 다음으로 동일한 관점에서 조사하고자 하는 패시베이션막에 열 CVD SiN을 적용하였다. 왜냐하면 열 CVD SiN은 수소 함량이 낮고 I가 높으며 품질이 좋은 것으로 잘 알려져 있기 때문이다.NH/ISi-H 비율. 우리는 열 CVD SiN 패시베이션이 AlGaN/GaN-HEMT의 게이트 누설 전류와 전류 붕괴 모두를 훨씬 더 개선할 수 있음을 확인했습니다. 또한 AlGaN/GaN HEMT의 MIS(Metal Insulator Semiconductor) 구조의 게이트 절연체에 열 CVD SiN을 적용하려고 했습니다. 열 CVD SiN 패시베이션은 전류 붕괴 현상을 줄이는 관점에서 PE-CVD SiN 패시베이션보다 게이트 절연체에 더 적합했습니다. 낮은 수소 함량과 높은 I로 인해 AlGaN/GaN HEMT에 대한 우수한 패시베이션 및 게이트 절연막을 달성하기 위해 열 CVD SiN 필름이 PE-CVD SiN 필름보다 우수하다고 믿을 수 있습니다.NH/ISi-H 비율.
Toshiharu MARUI
Shinich HOSHI
Masanori ITOH
Isao TAMAI
Fumihiko TODA
Hideyuki OKITA
Yoshiaki SANO
Shohei SEKI
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Toshiharu MARUI, Shinich HOSHI, Masanori ITOH, Isao TAMAI, Fumihiko TODA, Hideyuki OKITA, Yoshiaki SANO, Shohei SEKI, "Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1009-1014, July 2008, doi: 10.1093/ietele/e91-c.7.1009.
Abstract: In AlGaN/GaN high electron mobility transistors (HEMTs), drain current reduction by current collapse phenomenon is a big obstacle for a high efficient operation of power amplifier application. In this study, we investigated the effects of SiN passivation film quality on the electrical characteristics of AlGaN/GaN HEMTs. First, we conducted some experiments to investigate the relationship between electrical characteristics of AlGaN/GaN HEMTs and various conditions of SiN passivation film by plasma enhanced chemical vapor deposition (PE-CVD). We found that both gate current leakage and current collapse were improved simultaneously by SiN passivation film deposited by optimized condition of NH3 and SiH4 gas flow. It is found that the critical parameter in the optimization is a IN-H/ ISi-H ratio measured by Fourier transforms infrared spectroscopy (FT-IR) spectra. Next, a thermal CVD SiN was applied to the passivation film to be investigated from the same point of view, because a thermal CVD SiN is well known to have good quality with low hydrogen content and high IN-H/ISi-H ratio. We confirmed that the thermal CVD SiN passivation could improve much further both of the gate leakage current and the current collapse in AlGaN/GaN-HEMTs. Furthermore, we tried to apply the thermal CVD SiN to the gate insulator in MIS (Metal Insulator Semiconductor) structure of AlGaN/GaN HEMTs. The thermal CVD SiN passivation was more suitable for the gate insulator than PE-CVD SiN passivation in a view of reducing current collapse phenomena. It could be believed that the thermal CVD SiN film is superior to the PE-CVD SiN film to achieve good passivation and gate insulator film for AlGaN/GaN HEMTs due to the low hydrogen content and the high IN-H/ISi-H ratio.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1009/_p
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@ARTICLE{e91-c_7_1009,
author={Toshiharu MARUI, Shinich HOSHI, Masanori ITOH, Isao TAMAI, Fumihiko TODA, Hideyuki OKITA, Yoshiaki SANO, Shohei SEKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs},
year={2008},
volume={E91-C},
number={7},
pages={1009-1014},
abstract={In AlGaN/GaN high electron mobility transistors (HEMTs), drain current reduction by current collapse phenomenon is a big obstacle for a high efficient operation of power amplifier application. In this study, we investigated the effects of SiN passivation film quality on the electrical characteristics of AlGaN/GaN HEMTs. First, we conducted some experiments to investigate the relationship between electrical characteristics of AlGaN/GaN HEMTs and various conditions of SiN passivation film by plasma enhanced chemical vapor deposition (PE-CVD). We found that both gate current leakage and current collapse were improved simultaneously by SiN passivation film deposited by optimized condition of NH3 and SiH4 gas flow. It is found that the critical parameter in the optimization is a IN-H/ ISi-H ratio measured by Fourier transforms infrared spectroscopy (FT-IR) spectra. Next, a thermal CVD SiN was applied to the passivation film to be investigated from the same point of view, because a thermal CVD SiN is well known to have good quality with low hydrogen content and high IN-H/ISi-H ratio. We confirmed that the thermal CVD SiN passivation could improve much further both of the gate leakage current and the current collapse in AlGaN/GaN-HEMTs. Furthermore, we tried to apply the thermal CVD SiN to the gate insulator in MIS (Metal Insulator Semiconductor) structure of AlGaN/GaN HEMTs. The thermal CVD SiN passivation was more suitable for the gate insulator than PE-CVD SiN passivation in a view of reducing current collapse phenomena. It could be believed that the thermal CVD SiN film is superior to the PE-CVD SiN film to achieve good passivation and gate insulator film for AlGaN/GaN HEMTs due to the low hydrogen content and the high IN-H/ISi-H ratio.},
keywords={},
doi={10.1093/ietele/e91-c.7.1009},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - Effects of a Thermal CVD SiN Passivation Film on AlGaN/GaN HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1009
EP - 1014
AU - Toshiharu MARUI
AU - Shinich HOSHI
AU - Masanori ITOH
AU - Isao TAMAI
AU - Fumihiko TODA
AU - Hideyuki OKITA
AU - Yoshiaki SANO
AU - Shohei SEKI
PY - 2008
DO - 10.1093/ietele/e91-c.7.1009
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - In AlGaN/GaN high electron mobility transistors (HEMTs), drain current reduction by current collapse phenomenon is a big obstacle for a high efficient operation of power amplifier application. In this study, we investigated the effects of SiN passivation film quality on the electrical characteristics of AlGaN/GaN HEMTs. First, we conducted some experiments to investigate the relationship between electrical characteristics of AlGaN/GaN HEMTs and various conditions of SiN passivation film by plasma enhanced chemical vapor deposition (PE-CVD). We found that both gate current leakage and current collapse were improved simultaneously by SiN passivation film deposited by optimized condition of NH3 and SiH4 gas flow. It is found that the critical parameter in the optimization is a IN-H/ ISi-H ratio measured by Fourier transforms infrared spectroscopy (FT-IR) spectra. Next, a thermal CVD SiN was applied to the passivation film to be investigated from the same point of view, because a thermal CVD SiN is well known to have good quality with low hydrogen content and high IN-H/ISi-H ratio. We confirmed that the thermal CVD SiN passivation could improve much further both of the gate leakage current and the current collapse in AlGaN/GaN-HEMTs. Furthermore, we tried to apply the thermal CVD SiN to the gate insulator in MIS (Metal Insulator Semiconductor) structure of AlGaN/GaN HEMTs. The thermal CVD SiN passivation was more suitable for the gate insulator than PE-CVD SiN passivation in a view of reducing current collapse phenomena. It could be believed that the thermal CVD SiN film is superior to the PE-CVD SiN film to achieve good passivation and gate insulator film for AlGaN/GaN HEMTs due to the low hydrogen content and the high IN-H/ISi-H ratio.
ER -