The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
p-GaN에 대한 옴 접촉에 대한 건식 에칭의 영향을 연구하기 위해 저전력 건식 에칭 공정이 채택되었습니다. 성장된 p-GaN의 표면층이 저전력 SiCl에 의해 제거되었을 때4/ Cl2-에칭, 저전력 건식 에칭된 p-GaN에는 저항 접촉이 형성될 수 없습니다. 저전력 건식 식각 공정의 영향을 이해하기 위해 동일한 건식 식각 공정을 n-GaN에도 적용했습니다. 용량-전압별(이력서) 측정을 통해 p-GaN과 n-GaN의 쇼트키 장벽 높이(SBH)를 측정하였다. p-GaN과 n-GaN에서 측정된 SBH의 변화를 비교함으로써, 에칭 손상이 건식 에칭된 p-GaN에 대한 오믹 접촉 열화와 원래 표면층인 오믹 접촉 포르마틴의 원인이 되는 유일한 이유는 아니라는 것이 제안되었습니다. 성장된 p-GaN은 몇 가지 특별한 특성을 갖고 있는데, 이는 건식 에칭 공정으로 제거되었습니다. 성장된 p-GaN의 원래 표면을 부분적으로 복구하기 위해 고온 어닐링(1000
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Cheng-Yu HU, Jin-Ping AO, Masaya OKADA, Yasuo OHNO, "A Study on Ohmic Contact to Dry-Etched p-GaN" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1020-1024, July 2008, doi: 10.1093/ietele/e91-c.7.1020.
Abstract: Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1020/_p
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@ARTICLE{e91-c_7_1020,
author={Cheng-Yu HU, Jin-Ping AO, Masaya OKADA, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Study on Ohmic Contact to Dry-Etched p-GaN},
year={2008},
volume={E91-C},
number={7},
pages={1020-1024},
abstract={Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000
keywords={},
doi={10.1093/ietele/e91-c.7.1020},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - A Study on Ohmic Contact to Dry-Etched p-GaN
T2 - IEICE TRANSACTIONS on Electronics
SP - 1020
EP - 1024
AU - Cheng-Yu HU
AU - Jin-Ping AO
AU - Masaya OKADA
AU - Yasuo OHNO
PY - 2008
DO - 10.1093/ietele/e91-c.7.1020
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - Low-power dry-etching process has been adopted to study the influence of dry-etching on Ohmic contact to p-GaN. When the surface layer of as-grown p-GaN was removed by low-power SiCl4/Cl2-etching, no Ohmic contact can be formed on the low-power dry-etched p-GaN. The same dry-etching process was also applied on n-GaN to understand the influence of the low-power dry-etching process. By capacitance-voltage (C-V) measurement, the Schottky barrier heights (SBHs) of p-GaN and n-GaN were measured. By comparing the change of measured SBHs on p-GaN and n-GaN, it was suggested that etching damage is not the only reason responsible for the degraded Ohmic contacts to dry-etched p-GaN and for Ohmic contact formatin, the original surface layer of as-grown p-GaN have some special properties, which were removed by dry-etching process. To partially recover the original surface of as-grown p-GaN, high temperature annealing (1000
ER -