The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 문서에서는 SiC 전력 장치, 특히 SiC 전력 접합 전계 효과 트랜지스터(JFET)의 개발을 검토합니다. 안정적인 전력 스위칭 애플리케이션을 위해 매우 바람직한 오류 방지 기능을 제공할 수 있는 상시 OFF 전력 JFET에 중점을 두고 SiC 전력 JFET 개발에 대한 이론적 근거와 다양한 접근 방식이 제시됩니다. SiC 전력 IC의 첫 번째 시연에 대한 새로운 결과가 제시되고 35MHz보다 높은 주파수에서 분산형 DC-DC 전력 변환기의 잠재력이 논의됩니다.
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부
Jian H. ZHAO, Kuang SHENG, Yongxi ZHANG, Ming SU, "Current Status and Future Prospects of SiC Power JFETs and ICs" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1031-1041, July 2008, doi: 10.1093/ietele/e91-c.7.1031.
Abstract: This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1031/_p
부
@ARTICLE{e91-c_7_1031,
author={Jian H. ZHAO, Kuang SHENG, Yongxi ZHANG, Ming SU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current Status and Future Prospects of SiC Power JFETs and ICs},
year={2008},
volume={E91-C},
number={7},
pages={1031-1041},
abstract={This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.},
keywords={},
doi={10.1093/ietele/e91-c.7.1031},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - Current Status and Future Prospects of SiC Power JFETs and ICs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1031
EP - 1041
AU - Jian H. ZHAO
AU - Kuang SHENG
AU - Yongxi ZHANG
AU - Ming SU
PY - 2008
DO - 10.1093/ietele/e91-c.7.1031
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.
ER -