The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
수소 표면 종단을 갖춘 p형 다이아몬드 전계 효과 트랜지스터(FET)의 RF 특성을 기반으로 등가 회로(EQC) 모델을 설정합니다. 세 가지 경우의 비교를 통해 EQC에서 장치 성능을 나타내려면 소스, 게이트 및 드레인 저항을 고려해야 하지만 게이트-소스 및 게이트-드레인 저항은 무시할 수 있음을 알 수 있습니다. 다이아몬드 FET의 특징은 (1) 특정 게이트 전압 범위에서 게이트 커패시턴스의 안정 상태입니다. (2) 최대 fT and fMAX 임계 게이트 전압 근처의 차단 주파수, (3) 높은 fMAX/fT 비율
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Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI, "RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 1042-1049, July 2008, doi: 10.1093/ietele/e91-c.7.1042.
Abstract: On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.1042/_p
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@ARTICLE{e91-c_7_1042,
author={Makoto KASU, Kenji UEDA, Hiroyuki KAGESHIMA, Yoshiharu YAMAUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination},
year={2008},
volume={E91-C},
number={7},
pages={1042-1049},
abstract={On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
keywords={},
doi={10.1093/ietele/e91-c.7.1042},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
T2 - IEICE TRANSACTIONS on Electronics
SP - 1042
EP - 1049
AU - Makoto KASU
AU - Kenji UEDA
AU - Hiroyuki KAGESHIMA
AU - Yoshiharu YAMAUCHI
PY - 2008
DO - 10.1093/ietele/e91-c.7.1042
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - On the basis of the RF characteristics of p-type diamond field-effect transistors (FETs) with hydrogen surface termination, we establish an equivalent circuit (EQC) model. From comparisons of three cases we reveal that to represent the device performance in the EQC, the source, gate, and drain resistance should be considered but that the gate-source and gate-drain resistance can be ignored. The features of diamond FETs are (1) a plateau of the gate capacitance in a certain gate voltage range. (2) maximum fT and fMAX cut-off frequencies near the threshold gate voltage, and (3) a high fMAX/fT ratio
ER -