The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 밀리미터파 응용을 목표로 하는 AlGaN/GaN 이종 구조 전계 효과 트랜지스터(HFET)의 소자 제조 공정과 특성을 설명합니다. 우리는 단채널 효과를 억제하여 고주파 장치 특성을 향상시키는 세 가지 새로운 기술, 즉 높은 Al 조성 및 얇은 AlGaN 장벽 층, 촉매 화학 기상 증착에 의한 SiN 패시베이션, 100nm 미만의 Ti 기반 게이트를 개발했습니다. 디 알0.4Ga0.6게이트 길이가 30nm인 N/GaN HFET는 최대 드레인 전류 밀도가 1.6A/mm이고 최대 상호 컨덕턴스가 402mS/mm입니다. 이러한 기술을 사용하면 전류 이득 차단 주파수가 181GHz이고 최대 발진 주파수가 186GHz가 됩니다.
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Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI, "Development of High-Frequency GaN HFETs for Millimeter-Wave Applications" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 984-988, July 2008, doi: 10.1093/ietele/e91-c.7.984.
Abstract: This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al0.4Ga0.6N/GaN HFETs with a gate length of 30 nm had a maximum drain current density of 1.6 A/mm and a maximum transconductance of 402 mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181 GHz and a maximum oscillation frequency of 186 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.984/_p
부
@ARTICLE{e91-c_7_984,
author={Masataka HIGASHIWAKI, Takashi MIMURA, Toshiaki MATSUI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Development of High-Frequency GaN HFETs for Millimeter-Wave Applications},
year={2008},
volume={E91-C},
number={7},
pages={984-988},
abstract={This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al0.4Ga0.6N/GaN HFETs with a gate length of 30 nm had a maximum drain current density of 1.6 A/mm and a maximum transconductance of 402 mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181 GHz and a maximum oscillation frequency of 186 GHz.},
keywords={},
doi={10.1093/ietele/e91-c.7.984},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 984
EP - 988
AU - Masataka HIGASHIWAKI
AU - Takashi MIMURA
AU - Toshiaki MATSUI
PY - 2008
DO - 10.1093/ietele/e91-c.7.984
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al0.4Ga0.6N/GaN HFETs with a gate length of 30 nm had a maximum drain current density of 1.6 A/mm and a maximum transconductance of 402 mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181 GHz and a maximum oscillation frequency of 186 GHz.
ER -