The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 얇은 InGaN 캡 층을 갖춘 AlGaN/GaN HEMT를 제작하여 작은 외부 소스 저항으로 정상 오프 HEMT를 구현했습니다. 핵심 아이디어는 InGaN 캡 층에 분극 유발 전계를 사용하여 전도대가 상승하여 정상 작동이 해제되는 것입니다. In으로 제작된 HEMT0.2Ga0.85nm 두께의 N 캡 층은 0.4μm 길이의 게이트를 갖춘 장치에 대해 85V의 임계 전압과 1.9mS/mm의 최대 상호 컨덕턴스로 정상 오프(normally-off) 작동을 보여주었습니다. In을 에칭오프함으로써0.2Ga0.8게이트 및 옴 전극을 에칭 마스크로 사용하는 게이트 아래를 제외한 영역의 N 캡 층의 시트 저항은 2.7에서 0.75 kΩ/으로 감소했습니다.
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Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI, "Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 7, pp. 989-993, July 2008, doi: 10.1093/ietele/e91-c.7.989.
Abstract: We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.7.989/_p
부
@ARTICLE{e91-c_7_989,
author={Masafumi ITO, Shigeru KISHIMOTO, Fumihiko NAKAMURA, Takashi MIZUTANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer},
year={2008},
volume={E91-C},
number={7},
pages={989-993},
abstract={We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
keywords={},
doi={10.1093/ietele/e91-c.7.989},
ISSN={1745-1353},
month={July},}
부
TY - JOUR
TI - Normally-Off AlGaN/GaN HEMTs with Thin InGaN Cap Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 989
EP - 993
AU - Masafumi ITO
AU - Shigeru KISHIMOTO
AU - Fumihiko NAKAMURA
AU - Takashi MIZUTANI
PY - 2008
DO - 10.1093/ietele/e91-c.7.989
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2008
AB - We have fabricated AlGaN/GaN HEMTs with a thin InGaN cap layer to implement normally-off HEMTs with a small extrinsic source resistance. The key idea is to employ the polarization-induced field in the InGaN cap layer, by which the conduction band is raised leading to the normally-off operation. Fabricated HEMT with an In0.2Ga0.8N cap layer with a thickness of 5 nm showed normally-off operation with a threshold voltage of 0.4 V and a maximum transconductance of 85 mS/mm for the device with a 1.9-µm-long gate. By etching-off the In0.2Ga0.8N cap layer at the region except under the gate using gate and ohmic electrodes as etching masks, the sheet resistance has decreased from 2.7 to 0.75 kΩ/
ER -