The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
커패시터 불일치는 정밀 아날로그 애플리케이션에 중요한 장치 매개변수입니다. 지난 10년 동안 플로팅 게이트 측정 기술은 특성화를 위해 널리 사용되었습니다. 본 논문에서는 누설 전류가 기술에 미치는 영향을 설명합니다. 누출은 예를 들어 얇은 게이트 산화물 MOSFET 또는 고급 기술의 고유전율 커패시터에서 발생할 수 있습니다. 문제와 주요 원인을 설명하기 위해 SPICE 시뮬레이션, 벤치 측정, 분석 모델 및 수치 분석이 제시됩니다. 정확한 커패시터 체계적 및 무작위 불일치 특성화를 위한 기준이 개발되고 측정 정확도를 높이는 실제 방법이 논의됩니다.
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부
Weidong TIAN, Joe R. TROGOLO, Bob TODD, "Leakage Current and Floating Gate Capacitor Matching Test" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1315-1320, August 2008, doi: 10.1093/ietele/e91-c.8.1315.
Abstract: Capacitor mismatch is an important device parameter for precision analog applications. In the last ten years, the floating gate measurement technique has been widely used for its characterization. In this paper we describe the impact of leakage current on the technique. The leakage can come from, for example, thin gate oxide MOSFETs or high dielectric constant capacitors in advanced technologies. SPICE simulation, bench measurement, analytical model and numerical analyses are presented to illustrate the problem and key contributing factors. Criteria for accurate capacitor systematic and random mismatch characterization are developed, and practical methods of increasing measurement accuracy are discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1315/_p
부
@ARTICLE{e91-c_8_1315,
author={Weidong TIAN, Joe R. TROGOLO, Bob TODD, },
journal={IEICE TRANSACTIONS on Electronics},
title={Leakage Current and Floating Gate Capacitor Matching Test},
year={2008},
volume={E91-C},
number={8},
pages={1315-1320},
abstract={Capacitor mismatch is an important device parameter for precision analog applications. In the last ten years, the floating gate measurement technique has been widely used for its characterization. In this paper we describe the impact of leakage current on the technique. The leakage can come from, for example, thin gate oxide MOSFETs or high dielectric constant capacitors in advanced technologies. SPICE simulation, bench measurement, analytical model and numerical analyses are presented to illustrate the problem and key contributing factors. Criteria for accurate capacitor systematic and random mismatch characterization are developed, and practical methods of increasing measurement accuracy are discussed.},
keywords={},
doi={10.1093/ietele/e91-c.8.1315},
ISSN={1745-1353},
month={August},}
부
TY - JOUR
TI - Leakage Current and Floating Gate Capacitor Matching Test
T2 - IEICE TRANSACTIONS on Electronics
SP - 1315
EP - 1320
AU - Weidong TIAN
AU - Joe R. TROGOLO
AU - Bob TODD
PY - 2008
DO - 10.1093/ietele/e91-c.8.1315
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - Capacitor mismatch is an important device parameter for precision analog applications. In the last ten years, the floating gate measurement technique has been widely used for its characterization. In this paper we describe the impact of leakage current on the technique. The leakage can come from, for example, thin gate oxide MOSFETs or high dielectric constant capacitors in advanced technologies. SPICE simulation, bench measurement, analytical model and numerical analyses are presented to illustrate the problem and key contributing factors. Criteria for accurate capacitor systematic and random mismatch characterization are developed, and practical methods of increasing measurement accuracy are discussed.
ER -