The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 CMOS LDO(Low-Dropout Regulator)에 대한 새로운 보상 방식과 해당 패스 요소 구조를 제시합니다. 제안된 접근 방식은 출력 커패시터의 ESR에 대한 엄격한 안정성 제약을 효과적으로 완화합니다. 기존 보상을 사용한 CMOS LDO의 안정성을 위해서는 터널과 같은 영역에서 출력 커패시터의 유효 직렬 저항(ESR)이 필요합니다. 제안된 설계 방식을 사용하면 ESR 없이 출력 커패시터를 사용하여 LDO가 안정적일 수 있습니다. 2.5V/150mA LDO는 0.5μm 1P2M CMOS 프로세스를 사용하여 구현되었습니다. 실험 결과는 제안된 LDO가 0.33μF의 출력 커패시터와 ESR 없이 안정적임을 보여줍니다.
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부
Hsuan-I PAN, Chern-Lin CHEN, "A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 8, pp. 1356-1364, August 2008, doi: 10.1093/ietele/e91-c.8.1356.
Abstract: In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.8.1356/_p
부
@ARTICLE{e91-c_8_1356,
author={Hsuan-I PAN, Chern-Lin CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor},
year={2008},
volume={E91-C},
number={8},
pages={1356-1364},
abstract={In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.},
keywords={},
doi={10.1093/ietele/e91-c.8.1356},
ISSN={1745-1353},
month={August},}
부
TY - JOUR
TI - A CMOS Low Dropout Regulator with Extended Stable Region for the Effective Series Resistance of the Output Capacitor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1356
EP - 1364
AU - Hsuan-I PAN
AU - Chern-Lin CHEN
PY - 2008
DO - 10.1093/ietele/e91-c.8.1356
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2008
AB - In this paper, a new compensation scheme and a corresponding pass element structure for a CMOS low-dropout regulator (LDO) are presented. The proposed approach effectively alleviates the strict stability constraint on the ESR of the output capacitor. Stability of a CMOS LDO with the conventional compensation requires the effective series resistance (ESR) of the output capacitor in a tunnel-like region. With the proposed design approach, an LDO can be stable using an output capacitor without ESR. A 2.5 V/150 mA LDO has been implemented using a 0.5-µm 1P2M CMOS process. The experimental results illustrate that the proposed LDO is stable with an output capacitor of 0.33 µF and no ESR.
ER -