The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
프로그래밍 가능한 금속화 셀(PMC) 랜덤 액세스 메모리는 고체 전해질의 얇은 필름에서 전기화학적 성장과 나노크기 금속 경로의 제거를 기반으로 합니다. 본 연구에서는 프로그래밍 가능한 금속화 셀 장치에 사용하기 위해 칼코게나이드 물질에 Cu를 포토 도핑하여 형성된 박막의 특성을 조사합니다. 이러한 장치는 전기적으로 프로그래밍 가능한 저항 상태를 생성하기 위해 생성된 필름의 금속 이온 수송에 의존합니다. 결과는 Cu가 칼코게나이드 물질의 자유 원자와 반응하여 Cu가 풍부한 상이 분리됨을 의미합니다.
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Hyuk CHOI, Ki-Hyun NAM, Long-Yun JU, Hong-Bay CHUNG, "Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 9, pp. 1501-1504, September 2008, doi: 10.1093/ietele/e91-c.9.1501.
Abstract: Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolytes. In this study, we investigate the nature of thin films formed by the photo doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.9.1501/_p
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@ARTICLE{e91-c_9_1501,
author={Hyuk CHOI, Ki-Hyun NAM, Long-Yun JU, Hong-Bay CHUNG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices},
year={2008},
volume={E91-C},
number={9},
pages={1501-1504},
abstract={Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolytes. In this study, we investigate the nature of thin films formed by the photo doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.},
keywords={},
doi={10.1093/ietele/e91-c.9.1501},
ISSN={1745-1353},
month={September},}
부
TY - JOUR
TI - Optical Properties of Copper in Chalcogenide Materials Used in Programmable Metallization Cell Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 1501
EP - 1504
AU - Hyuk CHOI
AU - Ki-Hyun NAM
AU - Long-Yun JU
AU - Hong-Bay CHUNG
PY - 2008
DO - 10.1093/ietele/e91-c.9.1501
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2008
AB - Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of nanoscale metallic pathways in thin films of solid electrolytes. In this study, we investigate the nature of thin films formed by the photo doping of Cu into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ion transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.
ER -