The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
저전압 풀 컬러 FED 구현을 위해 FED용 형광체에 대한 요구 사항이 제안되었습니다. 특히, 형광체에서 방출된 가스나 물질이 FED 내 전계 방출에 미치는 영향이 명확해졌습니다. 에 대한 분석이 명확해졌습니다. F-N 플롯 V-I 전계 방출 특성 곡선은 전계 방출과 형광체의 상호 작용을 아는 데 도움이 되었습니다. 실험에서는 먼저 ZnGa의 경우 저전압 전자 여기의 형광체 표면으로부터 깊이를 구했습니다.2O4여기서 양극 전압 400V에서 음극발광이 가능한 영역은 표면으로부터 약 63nm 깊이입니다. 12.4cm-320(트리오)의 특징
전계 방출 디스플레이, 형광체, 저전압 음극발광, 전자 조사, 가스
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Shigeo ITOH, Hitoshi TOKI, Fumiaki KATAOKA, Yoshitaka SATO, Kiyoshi TAMURA, Yoshitaka KAGAWA, "Problems and Present Status of Phosphors in Low-Voltage Full-Color FEDs" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 10, pp. 1808-1813, October 1999, doi: .
Abstract: For the realization of low-voltage full-color FEDs, requirements for phosphor for the FED are proposed. Especially, the influence of released gases or substances from phosphors on the field emission within the FED was made clear. It was clarified that the analysis of F-N plots of the V-I curve of field emission characteristics was helpful to know the interaction of field emission and phosphors. In the experiment, we first obtained the depth from the phosphor surface of the low voltage electron excitation in case of ZnGa2O4, where the region available for cathodoluminescence at the anode voltage of 400 V is about 63 nm deep from the surface. The characteristic of the 12.4 cm-320(trio)
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_10_1808/_p
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@ARTICLE{e82-c_10_1808,
author={Shigeo ITOH, Hitoshi TOKI, Fumiaki KATAOKA, Yoshitaka SATO, Kiyoshi TAMURA, Yoshitaka KAGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Problems and Present Status of Phosphors in Low-Voltage Full-Color FEDs},
year={1999},
volume={E82-C},
number={10},
pages={1808-1813},
abstract={For the realization of low-voltage full-color FEDs, requirements for phosphor for the FED are proposed. Especially, the influence of released gases or substances from phosphors on the field emission within the FED was made clear. It was clarified that the analysis of F-N plots of the V-I curve of field emission characteristics was helpful to know the interaction of field emission and phosphors. In the experiment, we first obtained the depth from the phosphor surface of the low voltage electron excitation in case of ZnGa2O4, where the region available for cathodoluminescence at the anode voltage of 400 V is about 63 nm deep from the surface. The characteristic of the 12.4 cm-320(trio)
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - Problems and Present Status of Phosphors in Low-Voltage Full-Color FEDs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1808
EP - 1813
AU - Shigeo ITOH
AU - Hitoshi TOKI
AU - Fumiaki KATAOKA
AU - Yoshitaka SATO
AU - Kiyoshi TAMURA
AU - Yoshitaka KAGAWA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1999
AB - For the realization of low-voltage full-color FEDs, requirements for phosphor for the FED are proposed. Especially, the influence of released gases or substances from phosphors on the field emission within the FED was made clear. It was clarified that the analysis of F-N plots of the V-I curve of field emission characteristics was helpful to know the interaction of field emission and phosphors. In the experiment, we first obtained the depth from the phosphor surface of the low voltage electron excitation in case of ZnGa2O4, where the region available for cathodoluminescence at the anode voltage of 400 V is about 63 nm deep from the surface. The characteristic of the 12.4 cm-320(trio)
ER -