The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 저항성 믹서 작동의 수치 분석에 이어 매우 낮은 LO 전력으로 작동 가능한 V 대역(50~75GHz) 모놀리식 InP HEMT 저항성 믹서의 성능 측정에 대해 설명합니다. 우리 모델은 InP HEMT의 채널 컨덕턴스가 적용된 게이트 전압에 따라 세 가지 선형 함수로 설명될 수 있다고 가정합니다. 모델을 통해 얻은 계산 결과는 혼합기 작동에 필요한 LO 전력 수준이 게이트 바이어스 전압에 의해 결정되며 급격한 컨덕턴스 변화가 있는 장치가 저항성 혼합기의 낮은 LO 전력 작동에 적합하다는 것을 보여주었습니다. 또한 저항성 혼합기의 변환 손실 포화는 채널 컨덕턴스 포화로 인해 발생하는 것으로 나타났습니다. V-대역 모놀리식 저항 믹서는 CPW(Coplanar Waveguides)와 급격한 채널 이동이 있는 0.15mm InP HEMT를 사용하여 설계 및 제작되었습니다. 측정된 변환 손실과 시뮬레이션된 변환 손실이 잘 일치합니다. 8.4GHz RF 주파수 및 -55dBm LO 전력에서 2dB의 최소 변환 손실이 달성됩니다. 또한 뛰어난 IF 출력 선형성을 나타내어 1dB 압축 RF 입력 레벨을 LO 전력과 비교할 수 있어 상호 변조 성능이 우수함을 나타냅니다. 제안된 채널 컨덕턴스의 단순 모델이 저항성 혼합기의 변환 특성을 높은 정확도로 쉽게 계산할 수 있음을 입증합니다.
Takuo KASHIWA
Kazuya YAMAMOTO
Takayuki KATOH
Takao ISHIDA
Takahide ISHIKAWA
Yasuo MITSUI
Yoshikazu NAKAYAMA
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Takuo KASHIWA, Kazuya YAMAMOTO, Takayuki KATOH, Takao ISHIDA, Takahide ISHIKAWA, Yasuo MITSUI, Yoshikazu NAKAYAMA, "Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 10, pp. 1831-1838, October 1999, doi: .
Abstract: This paper describes numerical analyses of resistive mixer operation, followed by measured performances of a V-band (50 - 75 GHz) monolithic InP HEMT resistive mixer operable with a very low LO power. Our model assumes that the channel conductance of the InP HEMT can be described by three linear functions according to the applied gate voltage. The calculated results obtained with the model have shown that the LO power level required for mixer operation is determined by the gate bias voltage and that a device with abrupt conductance shifts is suited to low LO power operation for a resistive mixer. It is also shown that conversion loss saturation of a resistive mixer is caused by its channel conductance saturation. A V-band monolithic resistive mixer has been designed and fabricated using Coplanar Waveguides (CPW) and a 0.15 mm InP HEMT with abrupt channel shifts. Good agreement between measured and simulated conversion losses are obtained. A minimum conversion loss of 8.4 dB is achieved at the 55 GHz RF-frequency and the -2 dBm LO power. It also exhibits an excellent IF output linearity to allow the 1 dB compression RF input level to be comparable with LO power, indicating good intermodulation performance. It is demonstrated that the proposed simple model of the channel conductance can easily calculate conversion characteristics of a resistive mixer with high accuracy.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_10_1831/_p
부
@ARTICLE{e82-c_10_1831,
author={Takuo KASHIWA, Kazuya YAMAMOTO, Takayuki KATOH, Takao ISHIDA, Takahide ISHIKAWA, Yasuo MITSUI, Yoshikazu NAKAYAMA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power},
year={1999},
volume={E82-C},
number={10},
pages={1831-1838},
abstract={This paper describes numerical analyses of resistive mixer operation, followed by measured performances of a V-band (50 - 75 GHz) monolithic InP HEMT resistive mixer operable with a very low LO power. Our model assumes that the channel conductance of the InP HEMT can be described by three linear functions according to the applied gate voltage. The calculated results obtained with the model have shown that the LO power level required for mixer operation is determined by the gate bias voltage and that a device with abrupt conductance shifts is suited to low LO power operation for a resistive mixer. It is also shown that conversion loss saturation of a resistive mixer is caused by its channel conductance saturation. A V-band monolithic resistive mixer has been designed and fabricated using Coplanar Waveguides (CPW) and a 0.15 mm InP HEMT with abrupt channel shifts. Good agreement between measured and simulated conversion losses are obtained. A minimum conversion loss of 8.4 dB is achieved at the 55 GHz RF-frequency and the -2 dBm LO power. It also exhibits an excellent IF output linearity to allow the 1 dB compression RF input level to be comparable with LO power, indicating good intermodulation performance. It is demonstrated that the proposed simple model of the channel conductance can easily calculate conversion characteristics of a resistive mixer with high accuracy.},
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - Analyses on Monolithic InP HEMT Resistive Mixer Operating under Very Low LO Power
T2 - IEICE TRANSACTIONS on Electronics
SP - 1831
EP - 1838
AU - Takuo KASHIWA
AU - Kazuya YAMAMOTO
AU - Takayuki KATOH
AU - Takao ISHIDA
AU - Takahide ISHIKAWA
AU - Yasuo MITSUI
AU - Yoshikazu NAKAYAMA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1999
AB - This paper describes numerical analyses of resistive mixer operation, followed by measured performances of a V-band (50 - 75 GHz) monolithic InP HEMT resistive mixer operable with a very low LO power. Our model assumes that the channel conductance of the InP HEMT can be described by three linear functions according to the applied gate voltage. The calculated results obtained with the model have shown that the LO power level required for mixer operation is determined by the gate bias voltage and that a device with abrupt conductance shifts is suited to low LO power operation for a resistive mixer. It is also shown that conversion loss saturation of a resistive mixer is caused by its channel conductance saturation. A V-band monolithic resistive mixer has been designed and fabricated using Coplanar Waveguides (CPW) and a 0.15 mm InP HEMT with abrupt channel shifts. Good agreement between measured and simulated conversion losses are obtained. A minimum conversion loss of 8.4 dB is achieved at the 55 GHz RF-frequency and the -2 dBm LO power. It also exhibits an excellent IF output linearity to allow the 1 dB compression RF input level to be comparable with LO power, indicating good intermodulation performance. It is demonstrated that the proposed simple model of the channel conductance can easily calculate conversion characteristics of a resistive mixer with high accuracy.
ER -