The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
초고속 집적회로 기술은 초대용량 광통신 시스템을 구현하는 핵심 기술 중 하나이다. 40Gbit/s 이상의 작동 영역에 도달하려면 회로 및 패키징 설계의 기술적 혁신과 향상된 트랜지스터 성능이 필요합니다. 본 논문에서는 회로 속도를 높이기 위해 개발된 0.1μm 게이트 InP HEMT, 새로운 회로 설계 및 광대역 패키징 기술에 대해 설명합니다. 우리는 이러한 기술을 사용하여 40Gbit/s의 광파 통신 IC를 만들었습니다. 또한 이 문서에서는 100Gbit/s 작동에 대한 문제와 과제에 대해 설명합니다.
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Eiichi SANO, Yasuro YAMANE, "InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1879-1885, November 1999, doi: .
Abstract: Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1879/_p
부
@ARTICLE{e82-c_11_1879,
author={Eiichi SANO, Yasuro YAMANE, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond},
year={1999},
volume={E82-C},
number={11},
pages={1879-1885},
abstract={Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.},
keywords={},
doi={},
ISSN={},
month={November},}
부
TY - JOUR
TI - InP-Based Lightwave Communication ICs for 40 Gbit/s and Beyond
T2 - IEICE TRANSACTIONS on Electronics
SP - 1879
EP - 1885
AU - Eiichi SANO
AU - Yasuro YAMANE
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40-Gbit/s operating region. This paper describes a 0.1-µm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40-Gbit/s lightwave communication ICs. This paper also describes the problems and challenges toward 100-Gbit/s operation.
ER -