The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
이종접합 바이폴라 트랜지스터(HBT)는 L 대역 전력 증폭기, 고속 A/D 변환기, 광대역 증폭기, 레이저 드라이버 및 저위상 잡음 발진기를 포함한 다양한 애플리케이션을 위한 핵심 장치입니다. AlGaAs 이미터 HBT는 L 대역 휴대폰 애플리케이션에 충분한 신뢰성을 입증했습니다. 높은 접합 온도(>250)에서 확장된 신뢰성 성능이 필요한 애플리케이션용
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Noren PAN, Roger E. WELSER, Charles R. LUTZ, James ELLIOT, Jesse P. RODRIGUES, "Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1886-1894, November 1999, doi: .
Abstract: Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1886/_p
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@ARTICLE{e82-c_11_1886,
author={Noren PAN, Roger E. WELSER, Charles R. LUTZ, James ELLIOT, Jesse P. RODRIGUES, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors},
year={1999},
volume={E82-C},
number={11},
pages={1886-1894},
abstract={Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250
keywords={},
doi={},
ISSN={},
month={November},}
부
TY - JOUR
TI - Reliability of AlGaAs and InGaP Heterojunction Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1886
EP - 1894
AU - Noren PAN
AU - Roger E. WELSER
AU - Charles R. LUTZ
AU - James ELLIOT
AU - Jesse P. RODRIGUES
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - Heterojunction bipolar transistors (HBTs) are key devices for a variety of applications including L-band power amplifiers, high speed A/D converters, broadband amplifiers, laser drivers, and low phase noise oscillators. AlGaAs emitter HBTs have demonstrated sufficient reliability for L-band mobile phone applications. For applications which require extended reliability performance at high junction temperatures (>250
ER -