The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
GSM900/DCS1800 이중 대역 AlGaAs/GaAs HBT(이종접합 양극성 트랜지스터) MMIC(모놀리식 마이크로파 집적 회로) 전력 증폭기가 개발되었습니다. 여기에는 GSM900 및 DCS1800용 전력 증폭기, 정전압 바이어스 회로 및 DC 스위치가 포함됩니다. 고효율을 달성하기 위해 MMIC 증폭기의 최종단 HBT에는 외부 베이스/중앙-비아홀 레이아웃이 적용됩니다. 레이아웃은 각 HBT 핑거의 균일한 출력 부하 임피던스와 열 분포를 구현할 수 있습니다. 개발된 MMIC 증폭기는 GSM34.5의 경우 출력전력 53.4dBm, 전력부가효율 900%, DCS32.0의 경우 출력전력 41.8dBm, 전력부가효율 1800%를 제공할 수 있었다.
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Kazutomi MORI, Kenichiro CHOUMEI, Teruyuki SHIMURA, Tadashi TAKAGI, Yukio IKEDA, Osami ISHIDA, "A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1913-1920, November 1999, doi: .
Abstract: A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1913/_p
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@ARTICLE{e82-c_11_1913,
author={Kazutomi MORI, Kenichiro CHOUMEI, Teruyuki SHIMURA, Tadashi TAKAGI, Yukio IKEDA, Osami ISHIDA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT},
year={1999},
volume={E82-C},
number={11},
pages={1913-1920},
abstract={A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.},
keywords={},
doi={},
ISSN={},
month={November},}
부
TY - JOUR
TI - A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT
T2 - IEICE TRANSACTIONS on Electronics
SP - 1913
EP - 1920
AU - Kazutomi MORI
AU - Kenichiro CHOUMEI
AU - Teruyuki SHIMURA
AU - Tadashi TAKAGI
AU - Yukio IKEDA
AU - Osami ISHIDA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A GSM900/DCS1800 dual-band AlGaAs/GaAs HBT (heterojunction bipolar transistor) MMIC (monolithic microwave integrated circuit) power amplifier has been developed. It includes power amplifiers for GSM900 and DCS1800, constant voltage bias circuits and a d. c. switch. In order to achieve high efficiency, the outside-base/center-via-hole layout is applied to the final-stage HBT of the MMIC amplifier. The layout can realize uniform output load impedance and thermal distribution of each HBT finger. The developed MMIC amplifier could provided output power of 34.5 dBm and power-added efficiency of 53.4% for GSM900, and output power of 32.0 dBm and power-added efficiency of 41.8% for DCS1800.
ER -