The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
EB 리소그래피(EMMIE)를 사용하는 마이크로파 및 밀리미터파 IC용 임베디드 게이트 기술로 고이득 AlGaAs/InGaAs HJFET를 개발했습니다. EMMIE는 직접적인 SiO로 구성됩니다.2 화학 증폭형 레지스트 마스크를 사용한 0.14단계 건식 에칭으로 개구부를 엽니다. 4인치 웨이퍼에 묘사된 10μm 게이트 패턴은 XNUMXnm의 작은 편차를 나타냈습니다. Lg 및 Vth 표준편차는 55mV입니다. 게이트 상단과 오목면 사이의 최적 거리(hg)는 RF 이득 성능에 대한 프린징 게이트 대 드레인 커패시턴스의 영향을 조사하기 위해 12.4차원 장치 시뮬레이터를 사용하여 결정되었습니다. 제작된 76단 HJFET MMIC 증폭기는 XNUMXGHz에서 XNUMXdB의 매우 높은 이득 성능을 나타냈다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Akio WAKEJIMA, Yoichi MAKINO, Katsumi YAMANOGUCHI, Norihiko SAMOTO, "High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE)" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 1977-1981, November 1999, doi: .
Abstract: A high gain AlGaAs/InGaAs HJFET has been developed with Embedded gate technology for Microwave and Millimeter-wave IC's using EB lithography (EMMIE). EMMIE consists of a direct SiO2 opening by two-step dry-etching with a chemically amplified resist mask. 0.14 µm gate patterns delineated on 4-inch wafers exhibited a small deviation of 10 nm in Lg and a Vth standard deviation of 55 mV. The optimum distance between the top of the gate and the recess surface (hg) was determined using a two-dimensional device simulator in order to investigate the effect of fringing gate to drain capacitance on the RF gain performance. The fabricated one-stage HJFET MMIC amplifier exhibited extremely high gain performance of 12.4 dB at 76 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_1977/_p
부
@ARTICLE{e82-c_11_1977,
author={Akio WAKEJIMA, Yoichi MAKINO, Katsumi YAMANOGUCHI, Norihiko SAMOTO, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE)},
year={1999},
volume={E82-C},
number={11},
pages={1977-1981},
abstract={A high gain AlGaAs/InGaAs HJFET has been developed with Embedded gate technology for Microwave and Millimeter-wave IC's using EB lithography (EMMIE). EMMIE consists of a direct SiO2 opening by two-step dry-etching with a chemically amplified resist mask. 0.14 µm gate patterns delineated on 4-inch wafers exhibited a small deviation of 10 nm in Lg and a Vth standard deviation of 55 mV. The optimum distance between the top of the gate and the recess surface (hg) was determined using a two-dimensional device simulator in order to investigate the effect of fringing gate to drain capacitance on the RF gain performance. The fabricated one-stage HJFET MMIC amplifier exhibited extremely high gain performance of 12.4 dB at 76 GHz.},
keywords={},
doi={},
ISSN={},
month={November},}
부
TY - JOUR
TI - High Performance HJFET MMIC with Embedded Gate Technology for Microwave and Millimeter-Wave IC's Using EB Lithography (EMMIE)
T2 - IEICE TRANSACTIONS on Electronics
SP - 1977
EP - 1981
AU - Akio WAKEJIMA
AU - Yoichi MAKINO
AU - Katsumi YAMANOGUCHI
AU - Norihiko SAMOTO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A high gain AlGaAs/InGaAs HJFET has been developed with Embedded gate technology for Microwave and Millimeter-wave IC's using EB lithography (EMMIE). EMMIE consists of a direct SiO2 opening by two-step dry-etching with a chemically amplified resist mask. 0.14 µm gate patterns delineated on 4-inch wafers exhibited a small deviation of 10 nm in Lg and a Vth standard deviation of 55 mV. The optimum distance between the top of the gate and the recess surface (hg) was determined using a two-dimensional device simulator in order to investigate the effect of fringing gate to drain capacitance on the RF gain performance. The fabricated one-stage HJFET MMIC amplifier exhibited extremely high gain performance of 12.4 dB at 76 GHz.
ER -