The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
광대역, 저전력 전치 증폭기 및 고속, 저전력 모놀리식 통합 재생 수신기는 소규모 InP/InGaAs DHBT를 사용하여 설계 및 제작되었습니다. 프리앰프의 이득 대역폭 곱은 192GHz이고 전력 소모는 51mW입니다. 재생식 수신기는 20W의 전력 손실과 0.6dB의 입력 동적 범위로 13Gbit/s에서 성공적으로 작동합니다. 이 IC는 재생식 수신기에 대해 보고된 것 중 가장 낮은 에너지를 제공합니다. 또한, 구동 전압이 20V인 2Gbit/s 광 변조기 드라이버가 성공적으로 제작되었습니다. 이러한 결과는 고속, 저전력 광파 통신 IC용 InP/InGaAs DHBT의 타당성을 입증합니다.
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Eiichi SANO, Kenji KURISHIMA, Hiroki NAKAJIMA, Shoji YAMAHATA, "High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 11, pp. 2000-2006, November 1999, doi: .
Abstract: A wideband, low-power preamplifier and a high-speed, low-power monolithically integrated regenerative receiver are designed and fabricated using small-scale InP/InGaAs DHBTs. The preamplifier has a gain-bandwidth product of 192 GHz with a power dissipation of 51 mW. The regenerative receiver is successfully operated at 20 Gbit/s with a power dissipation of 0.6 W and an input dynamic range of 13 dB. This IC offers the lowest energy ever reported for regenerative receivers. In addition, a 20-Gbit/s optical modulator driver with a driving voltage of 2 V is successfully fabricated. These results demonstrate the feasibility of InP/InGaAs DHBTs for high-speed, low-power lightwave communication ICs.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_11_2000/_p
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@ARTICLE{e82-c_11_2000,
author={Eiichi SANO, Kenji KURISHIMA, Hiroki NAKAJIMA, Shoji YAMAHATA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors},
year={1999},
volume={E82-C},
number={11},
pages={2000-2006},
abstract={A wideband, low-power preamplifier and a high-speed, low-power monolithically integrated regenerative receiver are designed and fabricated using small-scale InP/InGaAs DHBTs. The preamplifier has a gain-bandwidth product of 192 GHz with a power dissipation of 51 mW. The regenerative receiver is successfully operated at 20 Gbit/s with a power dissipation of 0.6 W and an input dynamic range of 13 dB. This IC offers the lowest energy ever reported for regenerative receivers. In addition, a 20-Gbit/s optical modulator driver with a driving voltage of 2 V is successfully fabricated. These results demonstrate the feasibility of InP/InGaAs DHBTs for high-speed, low-power lightwave communication ICs.},
keywords={},
doi={},
ISSN={},
month={November},}
부
TY - JOUR
TI - High-Speed, Low-Power Lightwave Communication ICs Using InP/InGaAs Double-Heterojunction Bipolar Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 2000
EP - 2006
AU - Eiichi SANO
AU - Kenji KURISHIMA
AU - Hiroki NAKAJIMA
AU - Shoji YAMAHATA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1999
AB - A wideband, low-power preamplifier and a high-speed, low-power monolithically integrated regenerative receiver are designed and fabricated using small-scale InP/InGaAs DHBTs. The preamplifier has a gain-bandwidth product of 192 GHz with a power dissipation of 51 mW. The regenerative receiver is successfully operated at 20 Gbit/s with a power dissipation of 0.6 W and an input dynamic range of 13 dB. This IC offers the lowest energy ever reported for regenerative receivers. In addition, a 20-Gbit/s optical modulator driver with a driving voltage of 2 V is successfully fabricated. These results demonstrate the feasibility of InP/InGaAs DHBTs for high-speed, low-power lightwave communication ICs.
ER -