The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
밀리미터파 DR-VCO를 위한 새로운 전자기 결합 구조가 제안되었습니다. 이 구조는 평면형 유전체 공진기 위에 배치된 마이크로스트립 기판으로 구성되며 강력하게 제한된 전자기장과 높은 출력을 제공합니다. Q. 이 구조에 사용된 공진기는 TE입니다.010 모드 유전체 공진기는 유전체 기판과 기판 양면의 전극으로 구성됩니다. 각 전극에는 원형의 빈 패치가 있습니다. 접지 전극에 구멍이 있는 마이크로스트립 회로 기판이 공진기 위에 쌓여 있습니다. 공진기는 구멍을 통해 전송선에 자기적으로 결합됩니다. 커플링 구조는 다음과 같은 장점이 있습니다. (a) 전자기장이 중공 패치에 강력하게 제한되고, (b) 부하가 걸리지 않습니다. Q 강한 결합 하에서는 감소율이 18%에 불과합니다. DR-VCO의 공진회로로 사용하는 경우, 공진기와 절연되는 전송선을 공진기 근처에 배치할 수 있으므로 회로가 작을 수 있다. 둘 다 큰 로드 Q 그리고 공진 회로의 큰 반사 계수는 구조로 얻어집니다. 제작된 DR-VCO의 성능은 다음과 같습니다. 발진 중심 주파수는 30GHz이고 제어 전압이 242~91V로 변할 때 주파수 튜닝 범위는 2MHz입니다. 출력 전력은 10dBm 이상이며 C/N 90kHz 오프셋에서 100dBc/Hz는 주파수 범위에서 얻어집니다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Koichi SAKAMOTO, Takatoshi KATO, Sadao YAMASHITA, Yohei ISHIKAWA, "A Millimeter Wave DR-VCO on Planar Type Dielectric Resonator with Small Size and Low Phase Noise" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 1, pp. 119-125, January 1999, doi: .
Abstract: A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_1_119/_p
부
@ARTICLE{e82-c_1_119,
author={Koichi SAKAMOTO, Takatoshi KATO, Sadao YAMASHITA, Yohei ISHIKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Millimeter Wave DR-VCO on Planar Type Dielectric Resonator with Small Size and Low Phase Noise},
year={1999},
volume={E82-C},
number={1},
pages={119-125},
abstract={A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.},
keywords={},
doi={},
ISSN={},
month={January},}
부
TY - JOUR
TI - A Millimeter Wave DR-VCO on Planar Type Dielectric Resonator with Small Size and Low Phase Noise
T2 - IEICE TRANSACTIONS on Electronics
SP - 119
EP - 125
AU - Koichi SAKAMOTO
AU - Takatoshi KATO
AU - Sadao YAMASHITA
AU - Yohei ISHIKAWA
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 1999
AB - A new electromagnetic coupling structure has been proposed for a millimeter wave DR-VCO. The structure consists of a microstrip substrate placed on a planar type dielectric resonator and provides a strongly confined electromagnetic field and a high Q. The resonator used in this structure is a TE010 mode dielectric resonator composed of a dielectric substrate and electrodes on both sides of the substrate. Each electrode has a circular hollow patch. A microstrip circuit substrate with an aperture on the ground electrode is stacked on the resonator. The resonator is magnetically coupled to the transmission line through the aperture. The coupling structure has advantages as follows: (a) The electromagnetic field is strongly confined at the hollow patch, and (b) unloaded Q reduction is only 18% under a strong coupling. When the structure is used as a resonant circuit for a DR-VCO, the circuit can be small because the transmission lines to be isolated from the resonator are able to be placed near the resonator. Both a large loaded Q and a large reflection coefficient of a resonant circuit are obtained with the structure. Fabricated DR-VCO has following performances. The oscillation center frequency is 30. 242 GHz and the frequency tuning range is 91 MHz when the control voltage varies 2 to 10 V. An output power of more than 7.3 dBm and a C/N of 90 dBc/Hz at 100 kHz offset are obtained at the frequency range.
ER -