The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 1-Gbit/s 광전송 시스템을 위한 분산 증폭기 IC 모듈과 분산 2:40 신호 분배기 IC 모듈에 대해 설명합니다. 이 IC는 분산 회로 및 역 마이크로스트립 라인 설계 기술로 설계되었으며 다층 상호 연결 구조의 0μm 게이트 길이 GaAs MESFET을 사용하여 제작되었습니다. 이는 전사된 마이크로솔더 범프를 사용하는 플립칩 본딩 기술을 통해 칩 크기 캐비티 패키지의 박막 다층 기판에 장착되었습니다. 증폭기 모듈은 1GHz 이상의 3dB 대역폭과 50dB의 이득을 달성했습니다. 8:3 신호 분배기 모듈의 1dB 대역폭은 2GHz이고 손실은 40dB입니다. 이 모듈은 2Gbit/s에서 시연되었으며 명확한 아이 오프닝이 확인되었습니다.
GaAs MESFET, 증폭기, 분배 자, 마이크로스트립 라인, 플립 칩
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Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, "Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 3, pp. 475-482, March 1999, doi: .
Abstract: This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_3_475/_p
부
@ARTICLE{e82-c_3_475,
author={Hiroyuki KIKUCHI, Hideki TSUNETSUGU, Makoto HIRANO, Satoshi YAMAGUCHI, Yuhki IMAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding},
year={1999},
volume={E82-C},
number={3},
pages={475-482},
abstract={This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.},
keywords={},
doi={},
ISSN={},
month={March},}
부
TY - JOUR
TI - Ultra-High-Speed GaAs MESFET IC Modules Using Flip Chip Bonding
T2 - IEICE TRANSACTIONS on Electronics
SP - 475
EP - 482
AU - Hiroyuki KIKUCHI
AU - Hideki TSUNETSUGU
AU - Makoto HIRANO
AU - Satoshi YAMAGUCHI
AU - Yuhki IMAI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 1999
AB - This paper describes a distributed amplifier IC module and a distributed 1 : 2 signal distributor IC module for 40-Gbit/s optical transmission systems. These ICs were designed by the distributed circuit and inverted-microstrip-line design technique and fabricated using 0. 1-µm-gate-length GaAs MESFETs with a multilayer interconnection structure. These were mounted on a thin film multilayer substrate in a chip-size-cavity package by means of a flip-chip-bonding technique that uses transferred microsolder bumps. The amplifier module achieved a 3-dB bandwidth of more than 50 GHz and a gain of 8 dB. The 3-dB bandwidth of a 1 : 2 signal distributor module was 40 GHz and the loss was 2 dB. These modules were demonstrated at 40 Gbit/s and clear eye openings were confirmed.
ER -