The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 내부 정합 Ku밴드 고출력 증폭기의 입력 회로에 선형화 회로를 적용하여 선형성이 향상된 증폭에 대해 설명한다. 선형화 회로는 직렬로 구성됩니다. L, C, R 소스와 드레인이 접지된 FET로 구성되며, 입력 신호 라인과 접지 사이에 연결됩니다. 이 선형화 회로는 10mm 게이트 폭 이중 도핑 이종 접합 FET를 사용하는 Ku-band 25.2W 출력 전력 증폭기에 적용되었습니다. 전력 증폭기는 8dB 출력 압축 지점에서 약 6dB 출력 전력 백오프 지점에서 2차 상호 변조가 XNUMXdB 감소한 것으로 나타났습니다.
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부
Kohji MATSUNAGA, Yasuhiro OKAMOTO, Mikio KANAMORI, "Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 5, pp. 744-749, May 1999, doi: .
Abstract: This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_5_744/_p
부
@ARTICLE{e82-c_5_744,
author={Kohji MATSUNAGA, Yasuhiro OKAMOTO, Mikio KANAMORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain},
year={1999},
volume={E82-C},
number={5},
pages={744-749},
abstract={This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.},
keywords={},
doi={},
ISSN={},
month={May},}
부
TY - JOUR
TI - Low Distortion Ku-Band Power Heterojunction FET Amplifier Utilizing an FET with Grounded Source and Drain
T2 - IEICE TRANSACTIONS on Electronics
SP - 744
EP - 749
AU - Kohji MATSUNAGA
AU - Yasuhiro OKAMOTO
AU - Mikio KANAMORI
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1999
AB - This paper describes amplification with improved linearity by employing a linearizing circuit in an input circuit of an internally-matched Ku-band high power amplifier. The linearizing circuit is composed of series L, C, R and an FET with grounded source and drain, and is connected between the input signal line and ground. This linearizing circuit was applied to a Ku-band 10 W output power amplifier utilizing a 25.2 mm gate-width double-doped Heterojunction FET. The power amplifier demonstrated a 8 dB reduction of the third-order intermodulation at about 6 dB output power backoff point from the 2 dB output compression point.
ER -