The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
공진 전송 모드에서 단일 전자 트랜지스터(SET)의 전류-전압 특성을 조사합니다. 미래에 SET 장치가 통합 전자 장치에 적용될 때 양자 효과는 초소형 기하학에서 그 특성을 심각하게 변화시킬 것입니다. 전류는 점의 좁은 에너지 준위를 통한 공진 전달에 의해 지배됩니다. 2단계 시스템의 간단한 사례를 분석하고 전송 메커니즘을 명확하게 설명합니다. 낮은 터널링 속도 제한에서 저온(콘도 온도보다 높음)에서의 전송 특성을 논의하고 전류 값이 게이트 바이어스-드레인 바이어스 평면에서 분류되는 전류 맵을 제공합니다. 전자 흐름의 동적 측면이 전류 값에 심각한 영향을 미치는 것으로 나타났습니다.
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부
Kenji NATORI, Nobuyuki SANO, "A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode" in IEICE TRANSACTIONS on Electronics,
vol. E82-C, no. 9, pp. 1599-1606, September 1999, doi: .
Abstract: The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e82-c_9_1599/_p
부
@ARTICLE{e82-c_9_1599,
author={Kenji NATORI, Nobuyuki SANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode},
year={1999},
volume={E82-C},
number={9},
pages={1599-1606},
abstract={The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.},
keywords={},
doi={},
ISSN={},
month={September},}
부
TY - JOUR
TI - A Compact Model for the Current-Voltage Characteristics of a Single Electron Transistor in the Resonant Transport Mode
T2 - IEICE TRANSACTIONS on Electronics
SP - 1599
EP - 1606
AU - Kenji NATORI
AU - Nobuyuki SANO
PY - 1999
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E82-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1999
AB - The current-voltage characteristics of a single electron transistor (SET) in the resonant transport mode are investigated. In the future when SET devices are applied to integrated electronics, the quantum effect will seriously modify their characteristics in ultra-small geometry. The current will be dominated by the resonant transport through narrow energy levels in the dot. The simple case of a two-level system is analyzed and the transport mechanism is clarified. The transport property at low temperatures (higher than the Kondo temperature) in the low tunneling rate limit is discussed, and a current map where current values are classified in the gate bias-drain bias plane is provided. It was shown that the dynamic aspect of electron flow seriously influences the current value.
ER -