The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 백게이트 제어와 바디 효과 인자의 관점에서 저전력 및 저전압 MOSFET의 특징적인 트레이드 오프를 연구했습니다. 이전에 보고된 MOSFET 구조는 백게이트 구조 측면에서 4가지 범주로 분류됩니다. 고정된 백바이어스가 있는 MOSFET은 장치 구조에 관계없이 저전압에서 전류 구동이 제한된 반면, 바디가 게이트에 연결된 동적 임계값 MOSFET의 전류 구동은 바디 효과 계수가 증가함에 따라 더욱 향상되는 것으로 나타났습니다. 우리는 낮은 임계 전압에서 매우 큰 신체 효과 인자를 갖고 낮은 공급 전압에서 높은 전류 구동을 갖는 새로운 동적 임계 MOSFET, EIB(Electrically Induced Body) DTMOS를 제안했습니다.
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Toshiro HIRAMOTO, Makoto TAKAMIYA, "Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 2, pp. 161-169, February 2000, doi: .
Abstract: We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_2_161/_p
부
@ARTICLE{e83-c_2_161,
author={Toshiro HIRAMOTO, Makoto TAKAMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias},
year={2000},
volume={E83-C},
number={2},
pages={161-169},
abstract={We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.},
keywords={},
doi={},
ISSN={},
month={February},}
부
TY - JOUR
TI - Low Power and Low Voltage MOSFETs with Variable Threshold Voltage Controlled by Back-Bias
T2 - IEICE TRANSACTIONS on Electronics
SP - 161
EP - 169
AU - Toshiro HIRAMOTO
AU - Makoto TAKAMIYA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2000
AB - We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage.
ER -