The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
기가비트 DRAM에 사용하기 위해 2상 부스트 전압(VPP) 발생기 회로가 제안되었습니다. 패스 트랜지스터의 최대 게이트 산화막 전압과 VPP에 대한 공급 전압의 하한을 낮추었으며, VTN 기존 차지 펌프 회로의 경우 각각 VPP+VDD 및 1.5입니다. VTN 각기. 또한 새로운 회로에서는 펌핑 전류가 증가했습니다.
Young-Hee KIM
Jong-Ki NAM
Sang-Hoon LEE
Hong-June PARK
Joo-Sun CHOI
Choon-Sung PARK
Seung-Han AHN
Jin-Yong CHUNG
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Young-Hee KIM, Jong-Ki NAM, Sang-Hoon LEE, Hong-June PARK, Joo-Sun CHOI, Choon-Sung PARK, Seung-Han AHN, Jin-Yong CHUNG, "Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 2, pp. 266-269, February 2000, doi: .
Abstract: A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 VTN respectively. Also the pumping current was increased in the new circuit.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_2_266/_p
부
@ARTICLE{e83-c_2_266,
author={Young-Hee KIM, Jong-Ki NAM, Sang-Hoon LEE, Hong-June PARK, Joo-Sun CHOI, Choon-Sung PARK, Seung-Han AHN, Jin-Yong CHUNG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs},
year={2000},
volume={E83-C},
number={2},
pages={266-269},
abstract={A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 VTN respectively. Also the pumping current was increased in the new circuit.},
keywords={},
doi={},
ISSN={},
month={February},}
부
TY - JOUR
TI - Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs
T2 - IEICE TRANSACTIONS on Electronics
SP - 266
EP - 269
AU - Young-Hee KIM
AU - Jong-Ki NAM
AU - Sang-Hoon LEE
AU - Hong-June PARK
AU - Joo-Sun CHOI
AU - Choon-Sung PARK
AU - Seung-Han AHN
AU - Jin-Yong CHUNG
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2000
AB - A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and VTN respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5 VTN respectively. Also the pumping current was increased in the new circuit.
ER -