The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 입방형 GaN의 Si 및 Mg 도핑 특성을 연구하고 금속 유기 기상 에피택시를 통해 GaAs 기판 위에 입방형 GaN의 발광 다이오드를 제작했습니다. 다이오드 구조는 Si 도핑 GaN 및 AlGaN 층 위에 증착된 비도핑 및 Mg 도핑 GaN 적층 층으로 구성되었습니다. 이 다이오드 구조의 전자빔 유도 전류 신호 및 전류 주입 특성을 측정했습니다. 전자빔 유도 전류 신호에서 Mg 도핑된 GaN과 도핑되지 않은 GaN 사이의 경계면에 피크가 있었습니다. 이는 pn 접합의 성공적인 성장을 보여줍니다. 발광 작동은 실온에서 이 다이오드의 전도성 GaAs 기판을 통해 주입된 전류에 의해 달성되었습니다. 우리는 2.6eV에서 피크를 갖는 입방형 GaN의 밴드갭 에너지 아래에서 전기발광을 관찰했습니다.
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부
Hidenao TANAKA, Atsushi NAKADAIRA, "Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 585-590, April 2000, doi: .
Abstract: We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_585/_p
부
@ARTICLE{e83-c_4_585,
author={Hidenao TANAKA, Atsushi NAKADAIRA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy},
year={2000},
volume={E83-C},
number={4},
pages={585-590},
abstract={We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.},
keywords={},
doi={},
ISSN={},
month={April},}
부
TY - JOUR
TI - Cubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 585
EP - 590
AU - Hidenao TANAKA
AU - Atsushi NAKADAIRA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure consisted of undoped and Mg-doped GaN stacking layers deposited on Si-doped GaN and AlGaN layers. The electron-beam-induced-current signal and current injection characteristics of this diode structure were measured. There was a peak at the interface between the Mg-doped and undoped GaN in the electron-beam-induced-current signal. This shows successful growth of the p-n junction. Light emitting operation was achieved by currents injected through the conducting GaAs substrate of this diode at room temperature. We observed electroluminescence below the bandgap energy of cubic GaN with a peak at 2.6 eV.
ER -