The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
HVPE(할라이드 기상 에피택시)는 벌크 GaN을 얻는 가장 유망한 방법이며, 사파이어 기판에서 성장하고 레이저 조사로 분리하여 2인치 자립형 웨이퍼를 이미 얻었습니다. 그러나 이는 그다지 쉽지도 않고 그다지 생산적이지도 않습니다. 여기서 우리는 독립형 GaN이 아직 완벽하게 얻어지지는 않았지만 GaAs 기판에서 성장하는 또 다른 보다 생산적인 방법을 제안합니다. 매끄러운 표면을 가진 육각형 GaN이 GaAs(111) 기판에서 최대 1000까지 성장할 수 있다는 것이 밝혀졌습니다.
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Fumio HASEGAWA, Masato MINAMI , Takashi SUEMASU, "One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 4, pp. 633-638, April 2000, doi: .
Abstract: Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_4_633/_p
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@ARTICLE{e83-c_4_633,
author={Fumio HASEGAWA, Masato MINAMI , Takashi SUEMASU, },
journal={IEICE TRANSACTIONS on Electronics},
title={One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates},
year={2000},
volume={E83-C},
number={4},
pages={633-638},
abstract={Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000
keywords={},
doi={},
ISSN={},
month={April},}
부
TY - JOUR
TI - One Possibility of Obtaining Bulk GaN: Halide VPE Growth at 1000 on GaAs (111) Substrates
T2 - IEICE TRANSACTIONS on Electronics
SP - 633
EP - 638
AU - Fumio HASEGAWA
AU - Masato MINAMI
AU - Takashi SUEMASU
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2000
AB - Halide vapor phase epitaxy (HVPE) is the most promising method for obtaining bulk GaN, and a 2 inch free standing wafer has been already obtained by growing on a sapphire substrate and separating by laser irradiation. It is, however, neither very easy nor very productive. Here we propose another more productive way of growing on GaAs substrate, though a free standing GaN is not yet perfectly obtained. It was found that hexagonal GaN with a smooth surface can be grown on GaAs (111) substrates at as high as 1000
ER -