The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
ITO/P3HT/Al 샌드위치 셀 구성에서 위치 무작위 폴리(3-헥실티오펜) P3HT의 광캐리어 수송은 비행시간 기술을 통해 조사되었습니다. 쇼트키 다이오드의 특성과 정공 이동도의 크기는 합성 중에 포함된 불순물에 의해 영향을 받는 것으로 밝혀졌습니다. 실온에서 지역 무작위 P3HT의 정공 이동도는 2.4로 추정됩니다.
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Shyam S. PANDEY, Wataru TAKASHIMA, Shuichi NAGAMATSU, Keiichi KANETO, "Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 7, pp. 1088-1093, July 2000, doi: .
Abstract: Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_7_1088/_p
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@ARTICLE{e83-c_7_1088,
author={Shyam S. PANDEY, Wataru TAKASHIMA, Shuichi NAGAMATSU, Keiichi KANETO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)},
year={2000},
volume={E83-C},
number={7},
pages={1088-1093},
abstract={Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4
keywords={},
doi={},
ISSN={},
month={July},}
부
TY - JOUR
TI - Effect of Synthetic Impurities on Photocarrier Transport in Poly(3-Hexylthiophene)
T2 - IEICE TRANSACTIONS on Electronics
SP - 1088
EP - 1093
AU - Shyam S. PANDEY
AU - Wataru TAKASHIMA
AU - Shuichi NAGAMATSU
AU - Keiichi KANETO
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2000
AB - Photocarrier transport of regiorandom poly(3-hexylthiophene) P3HT in ITO/P3HT/Al sandwich cell configuration has been investigated by means of Time-of-Flight technique. Characteristics of Schottky diode and the magnitude of hole mobility have been found to be affected by impurities involved during the synthesis. The hole mobility in regiorandom P3HT at room temperature has been estimated to be 2.4
ER -