The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 SiGe 기반 단일 전자 트랜지스터(SET)의 선형 응답 컨덕턴스 계산을 제시합니다. 양자점의 컨덕턴스와 이산 충전은 자유 에너지 최소화를 통해 계산됩니다. 자유 에너지 계산에서는 이산 레벨 스펙트럼과 복잡한 다물체 상호 작용을 고려합니다. 소스 및 리드 장벽을 통한 터널링의 터널링 속도는 Bardeen의 전이 해밀턴 형식을 사용하여 계산됩니다. 터널링 행렬 요소는 양자점의 0차원 상태와 1차원 수축의 가장 낮은 하위 대역 사이의 전이에 대해 계산됩니다. 우리는 컨덕턴스 피크에 대한 결과를 피크의 모양이 에너지적인 인수로 인한 일정한 터널링 속도를 사용한 계산의 결과와 비교합니다.
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부
Andreas SCHOLZE, Andreas SCHENK, Wolfgang FICHTNER, "Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1242-1246, August 2000, doi: .
Abstract: We present calculations of the linear-response conductance of a SiGe based single-electron transistor (SET). The conductance and the discrete charging of the quantum dot are calculated by free-energy minimization. The free-energy calculation takes the discrete level-spectrum as well as complex many-body interactions into account. The tunneling rates for tunneling through the source and lead barrier are calculated using Bardeen's transfer Hamiltonian formalism. The tunneling matrix elements are calculated for transitions between the zero-dimensional states in the quantum dot and the lowest subband in the one-dimensional constriction. We compare the results for the conductance peaks with those from calculations with a constant tunneling rate where the shape of the peaks is only due to energetic arguments.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1242/_p
부
@ARTICLE{e83-c_8_1242,
author={Andreas SCHOLZE, Andreas SCHENK, Wolfgang FICHTNER, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors},
year={2000},
volume={E83-C},
number={8},
pages={1242-1246},
abstract={We present calculations of the linear-response conductance of a SiGe based single-electron transistor (SET). The conductance and the discrete charging of the quantum dot are calculated by free-energy minimization. The free-energy calculation takes the discrete level-spectrum as well as complex many-body interactions into account. The tunneling rates for tunneling through the source and lead barrier are calculated using Bardeen's transfer Hamiltonian formalism. The tunneling matrix elements are calculated for transitions between the zero-dimensional states in the quantum dot and the lowest subband in the one-dimensional constriction. We compare the results for the conductance peaks with those from calculations with a constant tunneling rate where the shape of the peaks is only due to energetic arguments.},
keywords={},
doi={},
ISSN={},
month={August},}
부
TY - JOUR
TI - Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1242
EP - 1246
AU - Andreas SCHOLZE
AU - Andreas SCHENK
AU - Wolfgang FICHTNER
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - We present calculations of the linear-response conductance of a SiGe based single-electron transistor (SET). The conductance and the discrete charging of the quantum dot are calculated by free-energy minimization. The free-energy calculation takes the discrete level-spectrum as well as complex many-body interactions into account. The tunneling rates for tunneling through the source and lead barrier are calculated using Bardeen's transfer Hamiltonian formalism. The tunneling matrix elements are calculated for transitions between the zero-dimensional states in the quantum dot and the lowest subband in the one-dimensional constriction. We compare the results for the conductance peaks with those from calculations with a constant tunneling rate where the shape of the peaks is only due to energetic arguments.
ER -