The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
도메인 경계의 삼각 측량을 먼저 수행하는 3차원 메시 생성 방법이 바람직합니다. 이러한 방법을 사용하면 경계 주변의 메시에 대한 요구 사항을 더 쉽게 달성할 수 있기 때문입니다. 우리는 이러한 접근 방식을 기반으로 XNUMXD 장치 시뮬레이터용 메쉬 생성기를 개발했습니다. 이 메시 생성기는 전체 도메인을 포함하는 상자를 옥트리 기술이라고 알려진 방법으로 더 작은 상자(셀)로 재귀적으로 세분화합니다. 우리의 메쉬 생성기는 요소의 재귀적 세분화를 활용한다는 점에서 이전에 보고된 메쉬 생성기와 유사하지만, 가장 큰 차이점은 도메인 경계에 먼저 삼각형 메쉬를 구성하고 이 삼각형 메쉬는 다음 프로세스에서 변경되지 않는다는 것입니다. Control Volume 방법에 적합한 메쉬를 생성하기 위해 "금지 영역"이 도입되고 도메인의 메쉬 포인트가 이 영역 외부에 할당됩니다. 삼각형 메쉬는 도메인 테셀레이션 이전에 결정되므로 이 방법은 경계를 따라 계층화된 메쉬를 처리하는 데 적합하며, 이는 종종 경계에 평행한 큰 흐름을 정확하게 추정하는 데 필요합니다. 평면 경계에 레이어 메쉬를 제공하는 간단한 방법이 메쉬 생성기에 통합되었습니다. 이 메쉬 생성기는 사내 XNUMX차원 장치 시뮬레이션 시스템에 통합되어 있습니다. 시뮬레이터의 실용성은 LOCOS 절연 구조를 갖춘 MOSFET에 대한 역협소채널 효과 분석을 통해 입증됩니다. 층상 메쉬에 의한 경계 보호 효과도 계산하여 검토한다. Id-Vg 경사진 Si 표면을 갖는 MOSFET의 특성을 통해, 드레인 전류를 정확하게 추정하기 위해서는 채널 영역 전체 표면의 보호가 필요함을 알 수 있습니다.
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부
Katsuhiko TANAKA, Akio NOTSU, Akio FURUKAWA, "A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1343-1348, August 2000, doi: .
Abstract: A three-dimensional mesh generation method in which triangulation of the domain boundary is performed first is desirable since such a method would make it easier to achieve the requirements for the mesh around the boundary. We have developed a mesh generator for a 3D device simulator based on this approach. This mesh generator recursively subdivides a box that includes the whole domain into smaller boxes (cells), a method known as the octree technique. Although our mesh generator is similar to previously reported mesh generators in the sense that it utilizes recursive subdivision of elements, its major difference is that it constructs a triangular mesh upon boundaries of the domain first and this triangular mesh is not changed in the following processes. In order to generate a mesh suitable for the control volume method, a "forbidden region" is introduced and mesh points in the domain are allocated outside of this region. Since the triangular mesh is determined prior to tessellation of the domain, this method is suitable for handling layered mesh along the boundary, which is often necessary to estimate large flows parallel to the boundary precisely. A simple method to provide a layered mesh for a planar boundary is incorporated into the mesh generator. This mesh generator is integrated within our in-house three-dimensional device simulation system. The simulator's practicality is demonstrated through analysis of the reverse narrow channel effect for MOSFETs with LOCOS isolation structures. The effect of protection of the boundary by the layered mesh is also examined by calculating Id-Vg characteristics of a MOSFET with an oblique Si surface, and it is shown that protection of the whole surface of the channel region is necessary to estimate drain current correctly.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1343/_p
부
@ARTICLE{e83-c_8_1343,
author={Katsuhiko TANAKA, Akio NOTSU, Akio FURUKAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary},
year={2000},
volume={E83-C},
number={8},
pages={1343-1348},
abstract={A three-dimensional mesh generation method in which triangulation of the domain boundary is performed first is desirable since such a method would make it easier to achieve the requirements for the mesh around the boundary. We have developed a mesh generator for a 3D device simulator based on this approach. This mesh generator recursively subdivides a box that includes the whole domain into smaller boxes (cells), a method known as the octree technique. Although our mesh generator is similar to previously reported mesh generators in the sense that it utilizes recursive subdivision of elements, its major difference is that it constructs a triangular mesh upon boundaries of the domain first and this triangular mesh is not changed in the following processes. In order to generate a mesh suitable for the control volume method, a "forbidden region" is introduced and mesh points in the domain are allocated outside of this region. Since the triangular mesh is determined prior to tessellation of the domain, this method is suitable for handling layered mesh along the boundary, which is often necessary to estimate large flows parallel to the boundary precisely. A simple method to provide a layered mesh for a planar boundary is incorporated into the mesh generator. This mesh generator is integrated within our in-house three-dimensional device simulation system. The simulator's practicality is demonstrated through analysis of the reverse narrow channel effect for MOSFETs with LOCOS isolation structures. The effect of protection of the boundary by the layered mesh is also examined by calculating Id-Vg characteristics of a MOSFET with an oblique Si surface, and it is shown that protection of the whole surface of the channel region is necessary to estimate drain current correctly.},
keywords={},
doi={},
ISSN={},
month={August},}
부
TY - JOUR
TI - A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary
T2 - IEICE TRANSACTIONS on Electronics
SP - 1343
EP - 1348
AU - Katsuhiko TANAKA
AU - Akio NOTSU
AU - Akio FURUKAWA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - A three-dimensional mesh generation method in which triangulation of the domain boundary is performed first is desirable since such a method would make it easier to achieve the requirements for the mesh around the boundary. We have developed a mesh generator for a 3D device simulator based on this approach. This mesh generator recursively subdivides a box that includes the whole domain into smaller boxes (cells), a method known as the octree technique. Although our mesh generator is similar to previously reported mesh generators in the sense that it utilizes recursive subdivision of elements, its major difference is that it constructs a triangular mesh upon boundaries of the domain first and this triangular mesh is not changed in the following processes. In order to generate a mesh suitable for the control volume method, a "forbidden region" is introduced and mesh points in the domain are allocated outside of this region. Since the triangular mesh is determined prior to tessellation of the domain, this method is suitable for handling layered mesh along the boundary, which is often necessary to estimate large flows parallel to the boundary precisely. A simple method to provide a layered mesh for a planar boundary is incorporated into the mesh generator. This mesh generator is integrated within our in-house three-dimensional device simulation system. The simulator's practicality is demonstrated through analysis of the reverse narrow channel effect for MOSFETs with LOCOS isolation structures. The effect of protection of the boundary by the layered mesh is also examined by calculating Id-Vg characteristics of a MOSFET with an oblique Si surface, and it is shown that protection of the whole surface of the channel region is necessary to estimate drain current correctly.
ER -