The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
NURBS를 이용한 표면 추출 알고리즘은 셀 기반 시뮬레이션 후 분산된 데이터로부터 메쉬 생성을 위해 개발되었습니다. 표면의 삼각 측량은 여러 점을 사용하여 다각형 경계를 따라 형상을 설명하는 단계로 시작됩니다. 이 작업에서는 다중 레벨 B-스플라인 표면 근사를 사용하여 각 다각형 표면에 대한 분산된 데이터로 NURBS 표면을 생성할 수 있습니다. 우리 알고리즘에 따른 NURBS 메시는 웨이퍼 지형의 표면 변화를 훌륭하게 나타냅니다. 웨이퍼의 복잡한 구조의 수치 시뮬레이션을 위한 광범위한 메모리 요구 사항을 해결하기 위해 동적으로 할당된 지형 모델, 소위 셀 전진 모델이 제안되었습니다. 우리 모델의 성능을 테스트하기 위해 오목한 원통형 DRAM 셀 커패시터가 선택되었습니다. 셀 커패시터와 인터커넥트에 존재하는 커패시턴스 세트는 CRAY T3E 슈퍼컴퓨터의 NURBS 표면에서 생성된 5,475,600차원 사면체 메시를 사용하여 계산되었습니다. 총 130 (XNUMX
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Sangho YOON, Jaehee LEE, Sukin YOON, Ohseob KWON, Taeyoung WON, "An Advancing Front Meshing Algorithm Using NURBS for Semiconductor Process Simulation" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 8, pp. 1349-1355, August 2000, doi: .
Abstract: A surface extraction algorithm with NURBS has been developed for the mesh generation from the scattered data after a cell-based simulation. The triangulation of a surface is initiated with a step of describing the geometry along the polygonal boundary with multiple points. In this work, an NURBS surface can be generated with scattered data for each polygonal surface by employing a multilevel B-spline surface approximation. The NURBS mesh in accordance with our algorithm excellently represents the surface evolution of the topography on the wafer. A dynamically allocated topography model, so-called cell advancing model, is proposed to resolve an extensive memory requirement for the numerical simulation of a complicated structure on the wafer. A concave cylindrical DRAM cell capacitor was chosen to test the capability of our model. A set of capacitance present in the cell capacitor and interconnects was calculated with three-dimensional tetrahedral meshes generated from the NURBS surface on CRAY T3E supercomputer. A total of 5,475,600 (130
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_8_1349/_p
부
@ARTICLE{e83-c_8_1349,
author={Sangho YOON, Jaehee LEE, Sukin YOON, Ohseob KWON, Taeyoung WON, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Advancing Front Meshing Algorithm Using NURBS for Semiconductor Process Simulation},
year={2000},
volume={E83-C},
number={8},
pages={1349-1355},
abstract={A surface extraction algorithm with NURBS has been developed for the mesh generation from the scattered data after a cell-based simulation. The triangulation of a surface is initiated with a step of describing the geometry along the polygonal boundary with multiple points. In this work, an NURBS surface can be generated with scattered data for each polygonal surface by employing a multilevel B-spline surface approximation. The NURBS mesh in accordance with our algorithm excellently represents the surface evolution of the topography on the wafer. A dynamically allocated topography model, so-called cell advancing model, is proposed to resolve an extensive memory requirement for the numerical simulation of a complicated structure on the wafer. A concave cylindrical DRAM cell capacitor was chosen to test the capability of our model. A set of capacitance present in the cell capacitor and interconnects was calculated with three-dimensional tetrahedral meshes generated from the NURBS surface on CRAY T3E supercomputer. A total of 5,475,600 (130
keywords={},
doi={},
ISSN={},
month={August},}
부
TY - JOUR
TI - An Advancing Front Meshing Algorithm Using NURBS for Semiconductor Process Simulation
T2 - IEICE TRANSACTIONS on Electronics
SP - 1349
EP - 1355
AU - Sangho YOON
AU - Jaehee LEE
AU - Sukin YOON
AU - Ohseob KWON
AU - Taeyoung WON
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2000
AB - A surface extraction algorithm with NURBS has been developed for the mesh generation from the scattered data after a cell-based simulation. The triangulation of a surface is initiated with a step of describing the geometry along the polygonal boundary with multiple points. In this work, an NURBS surface can be generated with scattered data for each polygonal surface by employing a multilevel B-spline surface approximation. The NURBS mesh in accordance with our algorithm excellently represents the surface evolution of the topography on the wafer. A dynamically allocated topography model, so-called cell advancing model, is proposed to resolve an extensive memory requirement for the numerical simulation of a complicated structure on the wafer. A concave cylindrical DRAM cell capacitor was chosen to test the capability of our model. A set of capacitance present in the cell capacitor and interconnects was calculated with three-dimensional tetrahedral meshes generated from the NURBS surface on CRAY T3E supercomputer. A total of 5,475,600 (130
ER -