The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
고전력 장치 응용을 위한 InGaP의 전자 수송 특성을 향상시키기 위해 InGaP/GaAs 복합 채널이 제안되었습니다. 높은 이동도의 GaAs의 기여로 인해 전자 이동도와 속도가 증가합니다. 복합 채널 FET는 InGaP 단일 채널 FET에 비해 높은 트랜스컨덕턴스와 드레인 전류를 나타내지만 항복 전압은 거의 동일합니다. 복합 채널 FET는 0.6GHz에서 46.2V 작동 시 17%의 전력 추가 효율로 1.9W/mmXNUMX의 출력 전력을 제공했습니다.
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Shigeru NAKAJIMA, Ken NAKATA, Kunio TANAKA, Kenji OTOBE, "An InGaP/GaAs Composite Channel FET for High Power Device Applications" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1300-1305, October 2001, doi: .
Abstract: An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1300/_p
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@ARTICLE{e84-c_10_1300,
author={Shigeru NAKAJIMA, Ken NAKATA, Kunio TANAKA, Kenji OTOBE, },
journal={IEICE TRANSACTIONS on Electronics},
title={An InGaP/GaAs Composite Channel FET for High Power Device Applications},
year={2001},
volume={E84-C},
number={10},
pages={1300-1305},
abstract={An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.},
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - An InGaP/GaAs Composite Channel FET for High Power Device Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1300
EP - 1305
AU - Shigeru NAKAJIMA
AU - Ken NAKATA
AU - Kunio TANAKA
AU - Kenji OTOBE
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - An InGaP/GaAs composite channel has been proposed in order to improve the electron transport properties of InGaP for high power device applications. The electron mobility and velocity are increased due to the contribution of high mobility GaAs. Although the composite channel FET shows higher transconductance and drain current than those of the InGaP single channel FET, the breakdown voltage is nearly the same. The composite channel FET delivered output power of 0.6 W/mm with power added efficiency of 46.2% under 17 V operation at 1.9 GHz.
ER -