The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
우리는 BCB(벤조사이클로부텐)를 저유전율 스페이서 유전체 재료로 사용하는 0.15μm T형 게이트 MODFET를 보고합니다. Low-k 재료를 사용하여 게이트 프린징 커패시턴스를 줄임으로써 부정형 MODFET의 RF 성능이 향상되었습니다. BCB 필름은 100°C에서 플라즈마 CVD 기술로 증착되었습니다.
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Yoshiharu ANDA, Katsuhiko KAWASHIMA, Mitsuru NISHITSUJI, Tsuyoshi TANAKA, "0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1323-1327, October 2001, doi: .
Abstract: We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1323/_p
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@ARTICLE{e84-c_10_1323,
author={Yoshiharu ANDA, Katsuhiko KAWASHIMA, Mitsuru NISHITSUJI, Tsuyoshi TANAKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer},
year={2001},
volume={E84-C},
number={10},
pages={1323-1327},
abstract={We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - 0.15-µm T-Shaped Gate MODFETs Using BCB as Low-k Spacer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1323
EP - 1327
AU - Yoshiharu ANDA
AU - Katsuhiko KAWASHIMA
AU - Mitsuru NISHITSUJI
AU - Tsuyoshi TANAKA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - We report 0.15-µm T-shaped gate MODFETs using BCB (Benzocyclobutene) as low-k spacer dielectric material. The RF performance of pseudomorphic MODFET was improved by reducing the gate fringing capacitance using low-k material. The BCB film was deposited by plasma CVD technique at 100
ER -