The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
InGaAs/AlGaAs 부정형 고전자 이동도 트랜지스터(PHEMT)의 드레인 전류 감소는 게이트 영역 아래에 유도된 RIE 손상으로 인해 관찰되었습니다. 그러나 상온에서도 게이트-드레인 역전류 스트레스 이후 드레인 전류가 회복될 수 있는 것으로 밝혀졌다. 드레인 전류의 회복률은 게이트-드레인 역전류 밀도에 따라 크게 달라집니다. 게이트-드레인 역전류 스트레스 하에서 회복률의 활성화 에너지는 0.531eV에서 0.119eV로 감소하는 것으로 확인되었습니다. 이 현상은 애벌런치 항복에 의해 생성된 정공의 재결합 강화 결함 반응으로 이해될 수 있습니다. 결함 수준에서 정공의 비방사성 재결합은 RIE 손상의 회복을 향상시키는 것으로 여겨집니다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Shinichi HOSHI, Takayuki IZUMI, Tomoyuki OHSHIMA, Masanori TSUNOTANI, Tamotsu KIMURA, "The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1350-1355, October 2001, doi: .
Abstract: The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1350/_p
부
@ARTICLE{e84-c_10_1350,
author={Shinichi HOSHI, Takayuki IZUMI, Tomoyuki OHSHIMA, Masanori TSUNOTANI, Tamotsu KIMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction},
year={2001},
volume={E84-C},
number={10},
pages={1350-1355},
abstract={The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.},
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - The Recovery Process of RIE-Damage in InGaAs/AlGaAs PHEMT Using Recombination Enhanced Defect Reaction
T2 - IEICE TRANSACTIONS on Electronics
SP - 1350
EP - 1355
AU - Shinichi HOSHI
AU - Takayuki IZUMI
AU - Tomoyuki OHSHIMA
AU - Masanori TSUNOTANI
AU - Tamotsu KIMURA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - The reduction of the drain current for InGaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been observed due to the RIE-damage induced under the gate region. However, it has been found that the drain current can be recovered after the gate-drain reverse current stress even at room temperature. The recovery rate of the drain current strongly depends on the gate-drain reverse current density. The activation energy of the recovery rate has been confirmed to decrease from 0.531 eV to 0.119 eV under the gate-drain reverse current stress. This phenomenon can be understood as a recombination enhanced defect reaction of holes generated by the avalanche breakdown. The non-radiative recombination of holes at the defect level is believed to enhance the recovery of the RIE-damage.
ER -