The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
실리콘 게르마늄 이종 구조 전계 효과 트랜지스터는 편안한 기하학적 구조에서 향상된 성능을 제공하는 CMOS 기술의 유망한 확장으로 제안되었습니다. 특히 저전력 작동 체제에서 SiGe 이종 구조 MOS 및 이종 구조 FET의 잠재력이 유망합니다. SiGe HMOS 기술에 적용할 수 있는 마이크로파워 체제에 적용 가능한 회로 설계 기법에 대해 논의합니다. 그런 다음 재료 및 응용 관점에서 HMOS의 최근 결과를 검토합니다. 우리는 무선 주파수 마이크로전력 애플리케이션에서 SiGe HMOS의 잠재력을 나타내는 시뮬레이션 결과를 보고함으로써 결론을 내립니다.
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Christos PAPAVASSILIOU, Kristel FOBELETS, Chris TOUMAZOU, "SiGe Hetero-FETs Potential for Micropower Applications" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1414-1422, October 2001, doi: .
Abstract: Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1414/_p
부
@ARTICLE{e84-c_10_1414,
author={Christos PAPAVASSILIOU, Kristel FOBELETS, Chris TOUMAZOU, },
journal={IEICE TRANSACTIONS on Electronics},
title={SiGe Hetero-FETs Potential for Micropower Applications},
year={2001},
volume={E84-C},
number={10},
pages={1414-1422},
abstract={Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.},
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - SiGe Hetero-FETs Potential for Micropower Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 1414
EP - 1422
AU - Christos PAPAVASSILIOU
AU - Kristel FOBELETS
AU - Chris TOUMAZOU
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - Silicon Germanium Heterostructure field effect transistors have been proposed as a promising extension to the CMOS technologies affording enhanced performance at relaxed geometries. Particularly promising is the potential of SiGe Heterostructure MOS and Heterostrucure FET at the low power operating regime. We discuss circuit design techniques applicable in the micropower regime which can be applied to SiGe HMOS technologies. We then review recent results in HMOS both from the material and the applications point of view. We conclude by reporting simulation results indicating the potential of SiGe HMOS in radiofrequency micropower applications.
ER -