The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
전자 사이클로트론 공명(ECR) 여기 플라즈마를 활용한 GaN의 표면 패시베이션 공정은 GaN 기반 고전력/고주파 전자 소자의 안정적인 동작 구현을 위해 특성화되고 최적화되었습니다. XPS 분석에서 NH는4OH 처리 및 ECR-N2 및 ECR-H2 플라즈마 처리는 GaN 표면에서 자연 산화물과 오염 물질을 제거하는 데 효과적인 것으로 나타났습니다. 죄악xECR 여기 플라즈마 화학 기상 증착(ECR-CVD) 공정으로 제조된 /GaN 구조가 더 나은 것으로 나타났습니다. 이력서 SiO와 비교한 동작2/GaN 구조. ECR 플라즈마를 이용한 표면처리 공정으로 계면특성을 향상시키고 Dit 2의 값
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Tamotsu HASHIZUME, Ryuusuke NAKASAKI, Shin-ya OOTOMO, Susumu OYAMA, Hideki HASEGAWA, "Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1455-1461, October 2001, doi: .
Abstract: Surface passivation process of GaN utilizing electron-cyclotron-resonance (ECR) excited plasma has been characterized and optimized for realization of stable operation in GaN-based high-power/high-frequancy electronic devices. From XPS analysis, the NH4OH treatment as well as the ECR-N2 and ECR-H2 plasma treatments were found to be effective in removing natural oxide and contaminants from the GaN surface. The SiNx/GaN structure prepared by the ECR excited plasma chemical vapor deposition (ECR-CVD) process showed better C-V behavior compared to the SiO2/GaN structure. Surface treatment process using the ECR plasma improved interface properties and achieved the Dit value of 2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1455/_p
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@ARTICLE{e84-c_10_1455,
author={Tamotsu HASHIZUME, Ryuusuke NAKASAKI, Shin-ya OOTOMO, Susumu OYAMA, Hideki HASEGAWA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film},
year={2001},
volume={E84-C},
number={10},
pages={1455-1461},
abstract={Surface passivation process of GaN utilizing electron-cyclotron-resonance (ECR) excited plasma has been characterized and optimized for realization of stable operation in GaN-based high-power/high-frequancy electronic devices. From XPS analysis, the NH4OH treatment as well as the ECR-N2 and ECR-H2 plasma treatments were found to be effective in removing natural oxide and contaminants from the GaN surface. The SiNx/GaN structure prepared by the ECR excited plasma chemical vapor deposition (ECR-CVD) process showed better C-V behavior compared to the SiO2/GaN structure. Surface treatment process using the ECR plasma improved interface properties and achieved the Dit value of 2
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film
T2 - IEICE TRANSACTIONS on Electronics
SP - 1455
EP - 1461
AU - Tamotsu HASHIZUME
AU - Ryuusuke NAKASAKI
AU - Shin-ya OOTOMO
AU - Susumu OYAMA
AU - Hideki HASEGAWA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - Surface passivation process of GaN utilizing electron-cyclotron-resonance (ECR) excited plasma has been characterized and optimized for realization of stable operation in GaN-based high-power/high-frequancy electronic devices. From XPS analysis, the NH4OH treatment as well as the ECR-N2 and ECR-H2 plasma treatments were found to be effective in removing natural oxide and contaminants from the GaN surface. The SiNx/GaN structure prepared by the ECR excited plasma chemical vapor deposition (ECR-CVD) process showed better C-V behavior compared to the SiO2/GaN structure. Surface treatment process using the ECR plasma improved interface properties and achieved the Dit value of 2
ER -