The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
마이크로파 및 밀리미터파 무선 통신 시스템용으로 15~50GHz 대역 GaAs MMIC 가변 감쇠기가 개발되었습니다. 감쇠기는 광대역 작동, 낮은 삽입 손실 및 간단한 제어 바이어스 방식과 우수한 임피던스 정합을 실현하기 위해 션트 연결된 HEMT를 사용하는 균형 분산 구성을 사용합니다. MMIC는 부정형 HEMT 장치 기술로 제작되었습니다. 1.6GHz에서 21dB의 넓은 감쇠 제어 범위로 26dB의 낮은 삽입 손실을 나타냈습니다. 또한 12dB 압축 지점에서 1dBm 이상의 입력 전력과 26.3차 인터셉트 지점에서 3dBm의 우수한 선형성을 보여주었습니다.
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Kazuya NISHIHORI, Shigeru WATANABE, Fumio SASAKI, Kazuhiro ARAI, "A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 10, pp. 1543-1547, October 2001, doi: .
Abstract: A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_10_1543/_p
부
@ARTICLE{e84-c_10_1543,
author={Kazuya NISHIHORI, Shigeru WATANABE, Fumio SASAKI, Kazuhiro ARAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control},
year={2001},
volume={E84-C},
number={10},
pages={1543-1547},
abstract={A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.},
keywords={},
doi={},
ISSN={},
month={October},}
부
TY - JOUR
TI - A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control
T2 - IEICE TRANSACTIONS on Electronics
SP - 1543
EP - 1547
AU - Kazuya NISHIHORI
AU - Shigeru WATANABE
AU - Fumio SASAKI
AU - Kazuhiro ARAI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2001
AB - A 15-50 GHz-band GaAs MMIC variable attenuator has been developed for microwave and millimeter-wave wireless communications systems. The attenuator employs a balanced distributed configuration using shunt connected HEMT's in order to realize a broadband operation, a low insertion loss and a good impedance matching with simple control bias scheme. The MMIC was fabricated with a pseudomorphic HEMT device technology. It has exhibited an insertion loss as low as 1.6 dB with an attenuation control range as wide as 21 dB at 26 GHz. It has also shown a good linearity of an input power of more than 12 dBm at 1-dB compression point and that of 26.3 dBm at a 3rd-order intercept point.
ER -