The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
광대역 VCO를 위한 공통 소스 및 공통 게이트 FET 구성의 네거티브 저항 특성을 연구합니다. 이는 또한 단순화된 3개의 커패시터 모델로도 설명됩니다. 그런 다음 설계 절차가 개발됩니다. 결과는 수 기가헤르츠 영역의 광대역 발진기 설계에 적용된다.
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부
Yao-Huang KAO, Tzung-Hsiung WU, "Behaviors of Negative Resistances and Its Influences on VCO Design" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 2, pp. 243-248, February 2001, doi: .
Abstract: The features of the negative resistance in common source and common gate FET configurations for wideband VCO are studied. They are also explained by the simplified three-capacitor model. A design procedure is then developed. The results are applied to a design of wide band oscillator at the several gigahertz region.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_2_243/_p
부
@ARTICLE{e84-c_2_243,
author={Yao-Huang KAO, Tzung-Hsiung WU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Behaviors of Negative Resistances and Its Influences on VCO Design},
year={2001},
volume={E84-C},
number={2},
pages={243-248},
abstract={The features of the negative resistance in common source and common gate FET configurations for wideband VCO are studied. They are also explained by the simplified three-capacitor model. A design procedure is then developed. The results are applied to a design of wide band oscillator at the several gigahertz region.},
keywords={},
doi={},
ISSN={},
month={February},}
부
TY - JOUR
TI - Behaviors of Negative Resistances and Its Influences on VCO Design
T2 - IEICE TRANSACTIONS on Electronics
SP - 243
EP - 248
AU - Yao-Huang KAO
AU - Tzung-Hsiung WU
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2001
AB - The features of the negative resistance in common source and common gate FET configurations for wideband VCO are studied. They are also explained by the simplified three-capacitor model. A design procedure is then developed. The results are applied to a design of wide band oscillator at the several gigahertz region.
ER -