The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
고주파수를 계산하는 모델 C-V 아직 모델링되지 않은 강유전체 커패시터의 특성을 제시한다. 처음에는, P-V 계산에 필요한 히스테리시스 모델 C-V 두 가지 수정 인자를 도입하고 실험 결과와 비교하여 특성이 향상되었습니다. 그런 다음 고주파수를 표현하기 위한 다른 매개변수 C-V AC 신호 입력에 대한 응답을 고려한 금속/강유전체/금속 구조의 특성을 도출합니다. 마지막으로, 이들 모델은 다음을 잘 예측하는 것으로 나타났습니다. C-V MFIS 및 MFMIS 구조의 히스테리시스 모양.
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Nobuhito OGATA, Hiroshi ISHIWARA, "A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 777-784, June 2001, doi: .
Abstract: The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_777/_p
부
@ARTICLE{e84-c_6_777,
author={Nobuhito OGATA, Hiroshi ISHIWARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors},
year={2001},
volume={E84-C},
number={6},
pages={777-784},
abstract={The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.},
keywords={},
doi={},
ISSN={},
month={June},}
부
TY - JOUR
TI - A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors
T2 - IEICE TRANSACTIONS on Electronics
SP - 777
EP - 784
AU - Nobuhito OGATA
AU - Hiroshi ISHIWARA
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - The model to calculate high frequency C-V characteristics of ferroelectric capacitors that have not been modeled yet is presented. At first, P-V hysteresis model necessary to calculate C-V characteristics is improved by introducing two modification factors and by comparing with experimental results. Then, other parameters to express high frequency C-V characteristic of the metal/ferroelectric/metal structure are derived, in which the response for AC signal input is considered. Finally, it has been shown that these models predict well the C-V hysteresis shapes of the MFIS and the MFMIS structures.
ER -