The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
유기금속화학기상증착법(MOCVD)을 통해 제조된 다양한 Bi 함량의 다결정 Sr-Bi-Ta-O 박막의 구성 원소의 화학적 안정성을 X선 광전자 분광법(XPS)을 통해 조사하였다. 또한, 다결정 필름에서 결정립계의 영향을 추정하기 위해 에피택셜 필름의 특성도 조사되었습니다. 따라서 Bi 요소만 Bi에서 대폭 변경되었습니다.3+ 상태를 Bi에게0 하나는 Ar 스퍼터링에 의한 것입니다. 이러한 변화는 필름의 Ta/Bi 몰비가 0.64에서 1.67로 증가함에 따라 증가했습니다. 이 결과는 다결정 필름뿐만 아니라 에피택셜 필름에서도 관찰되었으며, 이는 결정립계가 아닌 결정립 특성임을 시사합니다. 필름의 안정성과 누출 특성은 필름의 구성 요소에 따라 크게 달라집니다.
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Norimasa NUKAGA, Masatoshi MITSUYA, Hiroshi FUNAKUBO, "Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 791-795, June 2001, doi: .
Abstract: The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition (MOCVD) was investigated by X-ray photoelectron spectroscopy (XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi3+ state to Bi0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_791/_p
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@ARTICLE{e84-c_6_791,
author={Norimasa NUKAGA, Masatoshi MITSUYA, Hiroshi FUNAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition},
year={2001},
volume={E84-C},
number={6},
pages={791-795},
abstract={The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition (MOCVD) was investigated by X-ray photoelectron spectroscopy (XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi3+ state to Bi0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film.},
keywords={},
doi={},
ISSN={},
month={June},}
부
TY - JOUR
TI - Chemical Stability of SrBi2Ta2O9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 791
EP - 795
AU - Norimasa NUKAGA
AU - Masatoshi MITSUYA
AU - Hiroshi FUNAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - The chemical stability of the constituent elements in polycrystalline Sr-Bi-Ta-O thin film with various Bi content prepared by metalorganic chemical vapor deposition (MOCVD) was investigated by X-ray photoelectron spectroscopy (XPS). Moreover, that of the epitaxial films was also investigated to estimate the effect of the grain boundary in polycrystalline films. Therefore, only the Bi element drastically changed from Bi3+ state to Bi0 one by the Ar sputtering. This change increased with increasing the Ta/Bi mole ratio in the film from 0.64 to 1.67. This result was observed not only for the polycrystalline films but also for the epitaxial films, suggesting that this is the grain character not grain boundary one. The stability and the leakage character of the film strongly depend on the constituent of the film.
ER -