The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
티탄산바륨(BaTiO)의 헤테로에피택셜 성장에 2단계 증착 기술이 도입되었습니다.3) 얇은 필름. 헤테로에피택셜 BaTiO3 영화는 SrRuO에서 준비되었습니다3/ SrTiO3 저 RF 전력 증착, 2단계 증착, 고출력 증착의 세 가지 증착 방법을 사용하는 무선 주파수(RF) 마그네트론 스퍼터링을 통해 기판을 제작합니다. 헤테로에피택셜 필름에 대한 결정학적 및 강유전성 특성을 평가했습니다. 2단계 증착법으로 에피택셜 커패시터를 제조한 경우, 강유전성 잔류분극, 2Pr, 최대화되었습니다. 결정 품질을 향상시키기 위한 최적화된 증착 조건은 에피택셜 성장 동안 산화막에 도입될 수 있는 손상과 확산의 관점에서 논의되며, 이는 각각 RF 전력과 증착 시간에 의해 제어됩니다.
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Naoko YANASE, Kazuhide ABE, Noburu FUKUSHIMA, Takashi KAWAKUBO, "Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 796-801, June 2001, doi: .
Abstract: A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_796/_p
부
@ARTICLE{e84-c_6_796,
author={Naoko YANASE, Kazuhide ABE, Noburu FUKUSHIMA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition},
year={2001},
volume={E84-C},
number={6},
pages={796-801},
abstract={A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.},
keywords={},
doi={},
ISSN={},
month={June},}
부
TY - JOUR
TI - Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO3 Film Capacitors by 2-Step Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 796
EP - 801
AU - Naoko YANASE
AU - Kazuhide ABE
AU - Noburu FUKUSHIMA
AU - Takashi KAWAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - A 2-step deposition technique was introduced in the heteroepitaxial growth of barium titanate (BaTiO3) thin films. Heteroepitaxial BaTiO3 films were prepared on a SrRuO3/SrTiO3 substrate by radio frequency (RF) magnetron sputtering with three kinds of deposition method: low RF-power deposition, 2-step deposition, and high power deposition. The crystallographic and ferroelectric properties were evaluated for the heteroepitaxial films. When the epitaxial capacitor was prepared by the 2-step deposition technique, the ferroelectric remanent polarization, 2Pr, was maximized. The optimized deposition condition to improve the crystal quality is discussed in terms of damage and diffusion, which could be introduced into the oxide films during the epitaxial growth, and controlled by the RF-power and deposition time, respectively.
ER -