The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
에피택셜 SrTiO3에피택셜 (Ti,Al)N/Si(100) 상의 (STO) 필름은 Ti 버퍼층을 사용하여 성공적으로 얻어졌습니다. SrTiO3 필름은 (100) 방향으로 평행 에피택셜 관계(큐브-온-큐브)로 성장했습니다. 즉, (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. Ti-버퍼층은 마그네트론 스퍼터링을 이용하여 (Ti,Al)N 상에 성장시켰으며, 버퍼층의 두께는 2~10 nm였다. STO 필름을 스퍼터링한 후 Ti 버퍼층이 다결정 아나타제-TiO로 변경되었습니다.2.
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부
Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, "Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 6, pp. 808-813, June 2001, doi: .
Abstract: Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_6_808/_p
부
@ARTICLE{e84-c_6_808,
author={Kenya SANO, Ryoichi OHARA, Takashi KAWAKUBO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer},
year={2001},
volume={E84-C},
number={6},
pages={808-813},
abstract={Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.},
keywords={},
doi={},
ISSN={},
month={June},}
부
TY - JOUR
TI - Growth of Epitaxial SrTiO3 on Epitaxial (Ti,Al)N/Si(100) Substrate Using Ti-Buffer Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 808
EP - 813
AU - Kenya SANO
AU - Ryoichi OHARA
AU - Takashi KAWAKUBO
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2001
AB - Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully obtained using a Ti-buffer layer. The SrTiO3 film was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100)(Ti,Al)N//(100)Si, <110> SrTiO3//<110> (Ti,Al)N//<110> Si. The Ti-buffer layer was grown on (Ti,Al)N by magnetron sputtering, and the thickness of the buffer layer was 2-10 nm. After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.
ER -