The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
이 논문은 조명된 고주파 활성 소자에 대한 시간 영역 물리적 모델의 특성화 및 검증을 제시하고 전자기 상호 작용 및 산란뿐만 아니라 소자 시뮬레이션에도 FDTD의 전자기 분석을 사용할 수 있는 가능성을 보여줍니다. 마이크로파 시뮬레이터용. 이 모델은 마이크로미터 미만의 게이트 길이를 갖는 마이크로파 및 밀리미터파 장치의 캐리어 전송을 정확하게 설명하는 Boltzmann의 전송 방정식을 기반으로 합니다. 조명 효과는 모델에 수용되어 조명 장치 내부의 캐리어 밀도 변화를 나타냅니다. 시뮬레이션 결과는 검증 목적으로 일반적인 MESFET에 대해 사용 가능한 실험 기록과 비교됩니다. 시뮬레이션 결과는 능동 소자의 미시적 특성과 거시적 특성이 빛 에너지에 의해 변경됨을 보여줍니다. 이 사실은 모델을 조명 제어 하의 능동 장치 설계 방법에 대한 중요한 도구로 만듭니다.
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Mohamad A. ALSUNAIDI, Tatsuo KUWAYAMA, Shigeo KAWASAKI, "Numerical Characterization of Optically Controlled MESFETs Using an Energy-Dependent Physical Simulation Model" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 7, pp. 869-874, July 2001, doi: .
Abstract: This paper presents the characterization and validation of a time-domain physical model for illuminated high-frequency active devices and shows the possibility of use of the electromagnetic analysis of FDTD not only for electromagnetic interaction and scattering but also for the device simulation as a good candidate for a microwave simulator. The model is based on Boltzmann's Transport Equation, which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. Simulation results show that the microscopic as well as the macroscopic characteristics of the active device are altered by the light energy. This fact makes the model an important tool for the active device design method under illumination control.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_7_869/_p
부
@ARTICLE{e84-c_7_869,
author={Mohamad A. ALSUNAIDI, Tatsuo KUWAYAMA, Shigeo KAWASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Numerical Characterization of Optically Controlled MESFETs Using an Energy-Dependent Physical Simulation Model},
year={2001},
volume={E84-C},
number={7},
pages={869-874},
abstract={This paper presents the characterization and validation of a time-domain physical model for illuminated high-frequency active devices and shows the possibility of use of the electromagnetic analysis of FDTD not only for electromagnetic interaction and scattering but also for the device simulation as a good candidate for a microwave simulator. The model is based on Boltzmann's Transport Equation, which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. Simulation results show that the microscopic as well as the macroscopic characteristics of the active device are altered by the light energy. This fact makes the model an important tool for the active device design method under illumination control.},
keywords={},
doi={},
ISSN={},
month={July},}
부
TY - JOUR
TI - Numerical Characterization of Optically Controlled MESFETs Using an Energy-Dependent Physical Simulation Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 869
EP - 874
AU - Mohamad A. ALSUNAIDI
AU - Tatsuo KUWAYAMA
AU - Shigeo KAWASAKI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2001
AB - This paper presents the characterization and validation of a time-domain physical model for illuminated high-frequency active devices and shows the possibility of use of the electromagnetic analysis of FDTD not only for electromagnetic interaction and scattering but also for the device simulation as a good candidate for a microwave simulator. The model is based on Boltzmann's Transport Equation, which accurately accounts for carrier transport in microwave and millimeter wave devices with sub-micrometer gate lengths. Illumination effects are accommodated in the model to represent carrier density changes inside the illuminated device. The simulation results are compared to available experimental records for a typical MESFET for validation purposes. Simulation results show that the microscopic as well as the macroscopic characteristics of the active device are altered by the light energy. This fact makes the model an important tool for the active device design method under illumination control.
ER -