The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
MOSFET(탄도 금속 산화물 반도체 전계 효과 트랜지스터)의 전류 전압 특성을 검토합니다. 예를 들어 고유한 채널 구조와 저온 작동을 사용하여 캐리어 산란을 줄이면 나노미터에서 0.1μm 미만 크기의 MOSFET 작동이 탄도 전송에 접근합니다. 드레인 전류는 채널의 최대 전위 부근에서 캐리어 동작을 분석하여 파생됩니다. 최대 지점 주변의 가장 낮은 부대역에서 반송파 축퇴와 우세한 반송파 분포는 현재 값에 중요한 영향을 미칩니다. 단자 전압 측면에서 전류의 편리한 근사치가 제공됩니다. 전류 제어 메커니즘은 캐리어가 소스에서 채널로 주입되는 "주입 속도"를 사용하여 논의됩니다. 탄도성을 나타내는 지수가 제공되고 일부 발표된 실험 데이터가 분석됩니다. 준탄도 MOSFET의 전송에 대해 논의합니다.
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Kenji NATORI, "Scaling Limit of the MOS Transistor--A Ballistic MOSFET--" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 8, pp. 1029-1036, August 2001, doi: .
Abstract: The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e.g. the intrinsic channel structure and the low temperature operation, nanometer to sub-0.1 µm size MOSFETs operation approaches the ballistic transport. The drain current is derived by analyzing the carrier behavior in the vicinity of the potential maximum in the channel. The carrier degeneracy and the predominant carrier distribution in the lowest subband around the maximum point have critical effects on the current value. A convenient approximation of the current in terms of terminal voltages is given. The current control mechanism is discussed with use of the "Injection velocity," with which carriers are injected from the source to the channel. An index to represent the ballisticity is given, and some published experimental data are analyzed. Transport of the quasi-ballistic MOSFET is discussed.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_8_1029/_p
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@ARTICLE{e84-c_8_1029,
author={Kenji NATORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Scaling Limit of the MOS Transistor--A Ballistic MOSFET--},
year={2001},
volume={E84-C},
number={8},
pages={1029-1036},
abstract={The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e.g. the intrinsic channel structure and the low temperature operation, nanometer to sub-0.1 µm size MOSFETs operation approaches the ballistic transport. The drain current is derived by analyzing the carrier behavior in the vicinity of the potential maximum in the channel. The carrier degeneracy and the predominant carrier distribution in the lowest subband around the maximum point have critical effects on the current value. A convenient approximation of the current in terms of terminal voltages is given. The current control mechanism is discussed with use of the "Injection velocity," with which carriers are injected from the source to the channel. An index to represent the ballisticity is given, and some published experimental data are analyzed. Transport of the quasi-ballistic MOSFET is discussed.},
keywords={},
doi={},
ISSN={},
month={August},}
부
TY - JOUR
TI - Scaling Limit of the MOS Transistor--A Ballistic MOSFET--
T2 - IEICE TRANSACTIONS on Electronics
SP - 1029
EP - 1036
AU - Kenji NATORI
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2001
AB - The current voltage characteristics of the ballistic metal oxide semiconductor field effect transistor (MOSFET) is reviewed. Reducing the carrier scattering by employing e.g. the intrinsic channel structure and the low temperature operation, nanometer to sub-0.1 µm size MOSFETs operation approaches the ballistic transport. The drain current is derived by analyzing the carrier behavior in the vicinity of the potential maximum in the channel. The carrier degeneracy and the predominant carrier distribution in the lowest subband around the maximum point have critical effects on the current value. A convenient approximation of the current in terms of terminal voltages is given. The current control mechanism is discussed with use of the "Injection velocity," with which carriers are injected from the source to the channel. An index to represent the ballisticity is given, and some published experimental data are analyzed. Transport of the quasi-ballistic MOSFET is discussed.
ER -