The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
자기 터널 접합(MTJ), 즉 두 개의 강자성층(FM)으로 구성된 구조1 와 FM2)는 매우 얇은 절연체 장벽(I)으로 분리되어 최근 FM의 강자성체가 자화될 때 나타나는 큰 터널링 자기 저항(TMR)으로 주목을 받고 있습니다.1 와 FM2 적용된 자기장에서 상대 방향을 평행에서 역평행으로 변경합니다. 초고진공 마그네트론 스퍼터링 시스템을 사용하여 다양한 MTJ 구조가 탐색되었습니다. 더블 Hc 자기 터널 접합, NiFe/Al2O3/Co 및 FeCo/Al2O3/Co는 연속적인 접촉 마스크 배치를 사용하여 직접 제작되었습니다. 터널 장벽은 증착된 얇은 Al 층의 현장 플라즈마 산화에 의해 준비되었습니다. NiFe/Al의 경우2O3/Co 접합의 경우 최대 TMR 값은 실온에서 5.0%에 도달하고 스위칭 필드는 10 Oe 미만일 수 있으며 상대 단계 폭은 약 30 Oe입니다. 접합 저항은 수백 옴에서 수백 킬로옴으로 변하고, TMR 값은 적용된 접합 전압 바이어스가 증가함에 따라 단조롭게 감소합니다. FeCo/Al의 경우2O3/Co 접합, 실온에서 7%를 초과하는 TMR 값이 얻어졌습니다. FeCo/Al에서 4%의 역 TMR이 관찰되었다는 것은 놀라운 일입니다.2O3/회사 터널링 전자의 스핀 분극을 지배하는 물리학은 여전히 불분명합니다. 구조, NiFe/FeMn/NiFe/Al2O3FM 층 중 하나가 반강자성 FeMn 층으로 교환 바이어스된 /NiFe도 광학 리소그래피 기술을 사용하여 패터닝하여 제조되었습니다. 따라서 접합은 FM 층이 서로 평행하거나 역평행인 두 개의 잘 정의된 자기 상태를 나타냅니다. 실온에서 16%의 TMR 값이 얻어졌습니다. 스위칭 필드는 10 Oe 미만이고 스텝 폭은 30 Oe보다 큽니다.
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부
Biao YOU, Wenting SHENG, Jun DU, Wei ZHANG, Mu LU, An HU, "Study on Magnetic Tunnel Junction" in IEICE TRANSACTIONS on Electronics,
vol. E84-C, no. 9, pp. 1202-1206, September 2001, doi: .
Abstract: Magnetic tunnel junctions (MTJ), i.e., structures consisting of two ferromagnetic layers (FM1 and FM2), separated by a very thin insulator barrier (I), have recently attracted attention for their large tunneling magnetoresistance (TMR) which appears when the magnetization of the ferromagnets of FM1 and FM2 changes their relative orientation from parallel to antiparallel in an applied magnetic field. Using an ultrahigh vacuum magnetron sputtering system, a variety of MTJ structures have been explored. Double Hc magnetic tunnel junction, NiFe/Al2O3/Co and FeCo/Al2O3/Co, were fabricated directly using placement of successive contact mask. The tunnel barrier was prepared by in situ plasma oxidation of thin Al layers sputter deposited. For NiFe/Al2O3/Co junctions, the maximum TMR value reaches 5.0% at room temperature, the switching field can be less than 10 Oe and the relative step width is about 30 Oe. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms and TMR values decrease monotonously with the increase of applied junction voltage bias. For FeCo/Al2O3/Co junctions, TMR values exceeding 7% were obtained at room temperature. It is surprising that an inverse TMR of 4% was observed in FeCo/Al2O3/Co. The physics governing the spin polarization of tunneling electrons remains unclear. Structures, NiFe/FeMn/NiFe/Al2O3/NiFe, in which one of the FM layers is exchange biased with an antiferromagnetic FeMn layer, were also prepared by patterning using optical lithography techniques. Thus, the junctions exhibit two well-defined magnetic states in which the FM layers are either parallel or antiparallel to one another. TMR values of 16% at room temperature were obtained. The switching field is less than 10 Oe and step width is larger than 30 Oe.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e84-c_9_1202/_p
부
@ARTICLE{e84-c_9_1202,
author={Biao YOU, Wenting SHENG, Jun DU, Wei ZHANG, Mu LU, An HU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study on Magnetic Tunnel Junction},
year={2001},
volume={E84-C},
number={9},
pages={1202-1206},
abstract={Magnetic tunnel junctions (MTJ), i.e., structures consisting of two ferromagnetic layers (FM1 and FM2), separated by a very thin insulator barrier (I), have recently attracted attention for their large tunneling magnetoresistance (TMR) which appears when the magnetization of the ferromagnets of FM1 and FM2 changes their relative orientation from parallel to antiparallel in an applied magnetic field. Using an ultrahigh vacuum magnetron sputtering system, a variety of MTJ structures have been explored. Double Hc magnetic tunnel junction, NiFe/Al2O3/Co and FeCo/Al2O3/Co, were fabricated directly using placement of successive contact mask. The tunnel barrier was prepared by in situ plasma oxidation of thin Al layers sputter deposited. For NiFe/Al2O3/Co junctions, the maximum TMR value reaches 5.0% at room temperature, the switching field can be less than 10 Oe and the relative step width is about 30 Oe. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms and TMR values decrease monotonously with the increase of applied junction voltage bias. For FeCo/Al2O3/Co junctions, TMR values exceeding 7% were obtained at room temperature. It is surprising that an inverse TMR of 4% was observed in FeCo/Al2O3/Co. The physics governing the spin polarization of tunneling electrons remains unclear. Structures, NiFe/FeMn/NiFe/Al2O3/NiFe, in which one of the FM layers is exchange biased with an antiferromagnetic FeMn layer, were also prepared by patterning using optical lithography techniques. Thus, the junctions exhibit two well-defined magnetic states in which the FM layers are either parallel or antiparallel to one another. TMR values of 16% at room temperature were obtained. The switching field is less than 10 Oe and step width is larger than 30 Oe.},
keywords={},
doi={},
ISSN={},
month={September},}
부
TY - JOUR
TI - Study on Magnetic Tunnel Junction
T2 - IEICE TRANSACTIONS on Electronics
SP - 1202
EP - 1206
AU - Biao YOU
AU - Wenting SHENG
AU - Jun DU
AU - Wei ZHANG
AU - Mu LU
AU - An HU
PY - 2001
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E84-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 2001
AB - Magnetic tunnel junctions (MTJ), i.e., structures consisting of two ferromagnetic layers (FM1 and FM2), separated by a very thin insulator barrier (I), have recently attracted attention for their large tunneling magnetoresistance (TMR) which appears when the magnetization of the ferromagnets of FM1 and FM2 changes their relative orientation from parallel to antiparallel in an applied magnetic field. Using an ultrahigh vacuum magnetron sputtering system, a variety of MTJ structures have been explored. Double Hc magnetic tunnel junction, NiFe/Al2O3/Co and FeCo/Al2O3/Co, were fabricated directly using placement of successive contact mask. The tunnel barrier was prepared by in situ plasma oxidation of thin Al layers sputter deposited. For NiFe/Al2O3/Co junctions, the maximum TMR value reaches 5.0% at room temperature, the switching field can be less than 10 Oe and the relative step width is about 30 Oe. The junction resistance changes from hundreds of ohms to hundreds of kilo-ohms and TMR values decrease monotonously with the increase of applied junction voltage bias. For FeCo/Al2O3/Co junctions, TMR values exceeding 7% were obtained at room temperature. It is surprising that an inverse TMR of 4% was observed in FeCo/Al2O3/Co. The physics governing the spin polarization of tunneling electrons remains unclear. Structures, NiFe/FeMn/NiFe/Al2O3/NiFe, in which one of the FM layers is exchange biased with an antiferromagnetic FeMn layer, were also prepared by patterning using optical lithography techniques. Thus, the junctions exhibit two well-defined magnetic states in which the FM layers are either parallel or antiparallel to one another. TMR values of 16% at room temperature were obtained. The switching field is less than 10 Oe and step width is larger than 30 Oe.
ER -