The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
게이트 중첩 LDD(GOLD) 구조의 저온 폴리실리콘 박막 트랜지스터를 제작하였다. 기존 LDD와 단일 드레인 구조를 비교하여 전기적 스트레스 방법을 사용하여 신뢰성을 평가했습니다. 이전 연구자들이 보고한 바와 같이, 우리는 ON 전류의 열화와 전계 효과 이동도가 기존 LDD 또는 비 LDD 구조에 비해 매우 작음을 확인했습니다. 2차원 소자 시뮬레이터를 사용하여 GOLD TFT의 신뢰성을 분석했습니다. 우리는 수직 네거티브 필드가 GOLD TFT의 신뢰성을 향상시키는 데 지배적인 역할을 한다는 것을 분명히 했습니다. 임팩트 이온화는 수직 음전계에 의해 산화물과 폴리실리콘 사이의 경계면에서 멀리 떨어진 곳에서 발생합니다. GOLD 구조는 패널상의 시스템 구현에 유망하다.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
부
Tetsuo KAWAKITA, Hidehiro NAKAGAWA, Yukiharu URAOKA, Takashi FUYUKI, "Reliability of Low Temperature Poly-Si GOLD (Gate-Overlapped LDD) Structure TFTs" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 11, pp. 1854-1859, November 2002, doi: .
Abstract: Low-temperature poly-Si thin film transistor with gate-overlapped LDD (GOLD) structure was fabricated. Reliability was evaluated using electrical stress method comparing conventional LDD and single drain structures. As previous researchers have reported, we have confirmed that the degradation of ON current and the field effect mobility was very small compared to conventional LDD or non-LDD structures. We have analyzed the reliability of the GOLD TFT using two-dimensional device simulator. We have clarified that vertical negative field plays a dominant role for improving the reliability in the GOLD TFT. Impact ionization occurs far from the interface between the oxide and poly-silicon by the vertical negative field. GOLD structure is promising for the realization of system on panel.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_11_1854/_p
부
@ARTICLE{e85-c_11_1854,
author={Tetsuo KAWAKITA, Hidehiro NAKAGAWA, Yukiharu URAOKA, Takashi FUYUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Reliability of Low Temperature Poly-Si GOLD (Gate-Overlapped LDD) Structure TFTs},
year={2002},
volume={E85-C},
number={11},
pages={1854-1859},
abstract={Low-temperature poly-Si thin film transistor with gate-overlapped LDD (GOLD) structure was fabricated. Reliability was evaluated using electrical stress method comparing conventional LDD and single drain structures. As previous researchers have reported, we have confirmed that the degradation of ON current and the field effect mobility was very small compared to conventional LDD or non-LDD structures. We have analyzed the reliability of the GOLD TFT using two-dimensional device simulator. We have clarified that vertical negative field plays a dominant role for improving the reliability in the GOLD TFT. Impact ionization occurs far from the interface between the oxide and poly-silicon by the vertical negative field. GOLD structure is promising for the realization of system on panel.},
keywords={},
doi={},
ISSN={},
month={November},}
부
TY - JOUR
TI - Reliability of Low Temperature Poly-Si GOLD (Gate-Overlapped LDD) Structure TFTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1854
EP - 1859
AU - Tetsuo KAWAKITA
AU - Hidehiro NAKAGAWA
AU - Yukiharu URAOKA
AU - Takashi FUYUKI
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2002
AB - Low-temperature poly-Si thin film transistor with gate-overlapped LDD (GOLD) structure was fabricated. Reliability was evaluated using electrical stress method comparing conventional LDD and single drain structures. As previous researchers have reported, we have confirmed that the degradation of ON current and the field effect mobility was very small compared to conventional LDD or non-LDD structures. We have analyzed the reliability of the GOLD TFT using two-dimensional device simulator. We have clarified that vertical negative field plays a dominant role for improving the reliability in the GOLD TFT. Impact ionization occurs far from the interface between the oxide and poly-silicon by the vertical negative field. GOLD structure is promising for the realization of system on panel.
ER -