The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
본 논문에서는 50V 이상의 고전압 동작에서 새로운 InGaP 채널 전계 변조 플레이트 FET(InGaP FP-FET)의 높은 전력 밀도와 낮은 왜곡 특성을 설명합니다. 개발된 InGaP FP-FET는 100V의 매우 높은 항복 전압을 나타냈습니다. 충격 이온화 계수가 약 10인 경우3 GaAs보다 몇 배 작습니다. 이러한 우수한 항복 특성은 InGaP FP-FET가 고전압 고전력 작동을 위한 가장 바람직한 장치 구조 중 하나임을 나타냅니다. InGaP FP-FET는 1.6V의 드레인 바이어스 전압에서 작동하여 1.95GHz에서 55W/mm3의 출력 전력 밀도를 제공했습니다. 전력 작동이 클래스 A에서 클래스 AB로 이동함에 따라 3차 상호 변조 왜곡(IMXNUMX)과 전력 모두 전력 포화 지점 근처에서 게이트 누설 전류가 억제되어 더 높은 출력 전력 영역에서 PAE(부가 효율)가 향상되었습니다. 이러한 결과는 개발된 InGaP FP-FET가 높은 효율과 낮은 왜곡이 모두 요구되는 응용 분야에 적합하다는 것을 약속합니다.
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Akio WAKEJIMA, Kazuki OTA, Kohji MATSUNAGA, Masaaki KUZUHARA, "High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate" in IEICE TRANSACTIONS on Electronics,
vol. E85-C, no. 12, pp. 2041-2045, December 2002, doi: .
Abstract: This paper describes high power density and low distortion characteristics of a novel InGaP channel field-modulating plate FET (InGaP FP-FET) under high voltage operation of over 50 V. The developed InGaP FP-FET exhibited an extremely high breakdown voltage of 100 V with an impact ionization coefficient about 103 times smaller than that of GaAs. These superior breakdown characteristics indicate that the InGaP FP-FET is one of the most desirable device structures for high-voltage high-power operation. The InGaP FP-FET delivered an output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias voltage of 55 V. As power operation moves from class A to class AB, both 3rd-order intermodulation distortion (IM3) and power-added efficiency (PAE) at higher output-power region were improved, resulting from a suppressed gate leakage current near the power saturation point. These results promise that the developed InGaP FP-FET is suited for applications in which both high efficiency and low distortion are required.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e85-c_12_2041/_p
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@ARTICLE{e85-c_12_2041,
author={Akio WAKEJIMA, Kazuki OTA, Kohji MATSUNAGA, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate},
year={2002},
volume={E85-C},
number={12},
pages={2041-2045},
abstract={This paper describes high power density and low distortion characteristics of a novel InGaP channel field-modulating plate FET (InGaP FP-FET) under high voltage operation of over 50 V. The developed InGaP FP-FET exhibited an extremely high breakdown voltage of 100 V with an impact ionization coefficient about 103 times smaller than that of GaAs. These superior breakdown characteristics indicate that the InGaP FP-FET is one of the most desirable device structures for high-voltage high-power operation. The InGaP FP-FET delivered an output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias voltage of 55 V. As power operation moves from class A to class AB, both 3rd-order intermodulation distortion (IM3) and power-added efficiency (PAE) at higher output-power region were improved, resulting from a suppressed gate leakage current near the power saturation point. These results promise that the developed InGaP FP-FET is suited for applications in which both high efficiency and low distortion are required.},
keywords={},
doi={},
ISSN={},
month={December},}
부
TY - JOUR
TI - High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate
T2 - IEICE TRANSACTIONS on Electronics
SP - 2041
EP - 2045
AU - Akio WAKEJIMA
AU - Kazuki OTA
AU - Kohji MATSUNAGA
AU - Masaaki KUZUHARA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E85-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2002
AB - This paper describes high power density and low distortion characteristics of a novel InGaP channel field-modulating plate FET (InGaP FP-FET) under high voltage operation of over 50 V. The developed InGaP FP-FET exhibited an extremely high breakdown voltage of 100 V with an impact ionization coefficient about 103 times smaller than that of GaAs. These superior breakdown characteristics indicate that the InGaP FP-FET is one of the most desirable device structures for high-voltage high-power operation. The InGaP FP-FET delivered an output power density of 1.6 W/mm at 1.95 GHz operated at a drain bias voltage of 55 V. As power operation moves from class A to class AB, both 3rd-order intermodulation distortion (IM3) and power-added efficiency (PAE) at higher output-power region were improved, resulting from a suppressed gate leakage current near the power saturation point. These results promise that the developed InGaP FP-FET is suited for applications in which both high efficiency and low distortion are required.
ER -